2024-03-28T15:18:31Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/82912022-11-17T02:08:08Zhdl_2115_20045hdl_2115_139Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laserFujita, F.Homma, A.Oshiki, Y.Kaneko, J. H.Tsuji, K.Meguro, K.Yamamoto, Y.Imai, T.Teraji, T.Sawamura, T.Furusaka, M.time of flightUV pulse lasercarrier drift velocityCVD diamond428There are continuing efforts of developing faster FETs and diamond is one of the strong candidates as a base semiconductor. Since the upper-limit-frequency of diamond FETs determines saturated drift velocities of charge-carriers, we need to first characterize diamond to develop better FETs. It is, however, not easy to measure the velocities with response time of less than 20 ns. Therefore, we developed a drift velocity measurement system using a time-of-flight (TOF) technique with a UV laser with 100 ps pulse width. In order to realize response times faster than 20 ns, we employed a 50 Ω coaxial cable as a load, with which we could effectively reduce the stray capacitance and inductance, and also, suppress reflections in the signal which gives false signals. As a result, we can measure carrier-transit times shorter than 10 ns.ElsevierJournal Articleapplication/pdfhttp://hdl.handle.net/2115/8291https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/8291/1/DaRM14.pdf0925-9635Diamond and Related Materials1411-12199219942005-12enginfo:doi/10.1016/j.diamond.2005.08.003author