2024-03-28T11:15:00Zhttps://eprints.lib.hokudai.ac.jp/dspace-oai/requestoai:eprints.lib.hokudai.ac.jp:2115/83642022-11-17T02:08:08Zhdl_2115_20069hdl_2115_156Conductance Oscillation Characteristics of GaAs Schottky Wrap-Gate Single Electron TransistorsKasai, SeiyaSatoh, YoshihiroHasegawa, Hidekisingle electron transistor (SET)Schottky wrap gate (WPG)GaAsconductance oscillation549Conductance oscillation characteristics in GaAs-based Schottky wrap gate (WPG) single electron transistors (SETs) were investigated both experimentally and theoretically in view of application as a key switching device in future quantum integrated circuits. Fabricated WPG SETs showed that clear conductance oscillation characteristics with a small number of high conductance peaks. A simple theory based on a quantum mechanical treatment reproduced qualitatively the features of the experimentally observed conductance peaks, indicating that the resonant tunneling contributes to currents in the WPG SETs. However, quantitatively, a discrepancy existed between theory and experiment on the temperature dependence of peak heights.ElsevierJournal Articleapplication/pdfhttp://hdl.handle.net/2115/8364https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/8364/1/HCIS.pdf0921-4526Physica B: Condensed Matter2721-488911999-12-01enginfo:doi/10.1016/S0921-4526(99)00373-7author