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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 20 of 27
| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article | Tsurumaki-Fukuchi, Atsushi; Katase, Takayoshi; Ohta, Hiromichi; Arita, Masashi; Takahashi, Yasuo | Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics | - | ACS applied materials & interfaces | - | 5-Apr-2023 |
| article | Gyakushi, Takayuki; Amano, Ikuma; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, Yasuo | Double gate operation of metal nanodot array based single electron device | - | Scientific reports | - | 6-Jul-2022 |
| article | Gyakushi, Takayuki; Asai, Yuki; Honjo, Shusaku; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, Yasuo | Charge-offset stability of single-electron devices based on single-layered Fe nanodot array | - | AIP Advances | - | 1-Mar-2021 |
| article (author version) | Tsurumaki-Fukuchi, Atsushi; Tsubaki, Keiji; Katase, Takayoshi; Kamiya, Toshio; Masashi, Arita; Takahashi, Yasuo | Stable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO4 | - | ACS applied materials & interfaces | - | 24-Jun-2020 |
| article (author version) | Arita, Masashi; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo | Filamentary switching of ReRAM investigated by in-situ TEM | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Apr-2020 |
| article (author version) | Tsurumaki-Fukuchi, Atsushi; Tsuta, Yusuke; Arita, Masashi; Takahashi, Yasuo | Controlled Current Transport in Pt/Nb:SrTiO3 Junctions via Insertion of Uniform Thin Layers of TaOx | - | Physica status solidi. Rapid research letters | - | Jul-2019 |
| article (author version) | Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, Yasuo | Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx | - | ACS Applied Materials & Interfaces | - | 22-Jan-2018 |
| article (author version) | Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, Yasuo | EELS Analysis of Oxygen Scavenging Effect in a Resistive Switching Structure of Pt/Ta/SrTiO3/Pt | - | MRS Advances | - | 2018 |
| article (author version) | Arita, Masashi; Ohno, Yuuki; Murakami, Yosuke; Takamizawa, Keisuke; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo | Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles | - | Nanoscale | - | Aug-2016 |
| article (author version) | Arita, Masashi; Ohno, Yuuki; Takahashi, Yasuo | Switching of Cu/MoOx/TiN CBRAM occurred at MoOx/TiN interface | - | Physica Status Solidi A applications and materials science | - | Feb-2016 |
| article | Arita, Masashi; Takahashi, Akihito; Ohno, Yuuki; Nakane, Akitoshi; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo | Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM | - | Scientific Reports | - | 27-Nov-2015 |
| article | Uchida, Takafumi; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Fujiwara, Akira; Takahashi, Yasuo | Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire | - | AIP advances | - | Nov-2015 |
| bookchapter | Arita, Masashi; Hamada, Kouichi; Takahashi, Yasuo; Sueoka, Kazuhisa; Shibayama, Tamaki | In Situ Transmission Electron Microscopy for Electronics | - | - | - | 2-Sep-2015 |
| article | Kudo, Masaki; Arita, Masashi; Ohno, Yuuki; Takahashi, Yasuo | Filament formation and erasure in molybdenum oxide during resistive switching cycles | - | Applied Physics Letters | - | 27-Oct-2014 |
| article | Li, Gui-fang; Honda, Yusuke; Liu, Hong-xi; Matsuda, Ken-ichi; Arita, Masashi; Uemura, Tetsuya; Yamamoto, Masafumi; Miura, Yoshio; Shirai, Masafumi; Saito, Toshiaki; Shi, Fengyuan; Voyles, Paul M. | Effect of nonstoichiometry on the half-metallic character of Co2MnSi investigated through saturation magnetization and tunneling magnetoresistance ratio | - | Physical Review B | - | 30-Jan-2014 |
| article | Fujii, Takashi; Arita, Masashi; Hamada, Kouichi; Takahashi, Yasuo; Sakaguchi, Norihito | In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis | - | Journal of Applied Physics | - | 28-Feb-2013 |
| article | Liu, Hong-xi; Honda, Yusuke; Taira, Tomoyuki; Matsuda, Ken-ichi; Arita, Masashi; Uemura, Tetsuya; Yamamoto, Masafumi | Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling | - | Applied Physics Letters | - | 24-Sep-2012 |
| article (author version) | Arita, M.; Kaji, H.; Fujii, T.; Takahashi, Y. | Resistance switching properties of molybdenum oxide films | - | Thin Solid Films | - | 1-May-2012 |
| article | Fujii, Takashi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, Ichiro | Analysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy | - | Journal of Materials Research | - | 28-Mar-2012 |
| article | Fujii, Takashi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, Ichiro | In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching | - | Applied Physics Letters | - | 23-May-2011 |
Showing results 1 to 20 of 27
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