| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article (author version) | Akazawa, Masamichi; Kamoshida, Ryo | Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Sep-2020 |
| article | Akazawa, M.; Amemiya, Y.; Shibata, N. | Annealing method for operating quantum-cellular-automaton systems | - | Journal of Applied Physics | - | 15-Nov-1997 |
| article | Akazawa, Masamichi; Amemiya, Yoshihito | Boltzmann machine neuron circuit using single-electron tunneling | - | Applied Physics Letters | - | 3-Feb-1997 |
| article (author version) | Akazawa, Masamichi; Kitajima, Shouhei; Kitawaki, Yuya | Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Oct-2019 |
| article (author version) | Akazawa, Masamichi; Kitajima, Shouhei | Control of plasma-CVD SiO2/InAlN interface by ultrathin atomic-layer-deposited Al2O3 interlayer | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Aug-2019 |
| article (author version) | Suda, Yoshiyuki; Nishimura, T.; Ono, T.; Akazawa, M.; Sakai, Y.; Homma, N. | Deposition of fine carbon particles using pulsed ArF laser ablation assisted by inductively coupled plasma | - | Thin Solid Films | - | 17-Oct-2000 |
| article | Akazawa, Masamichi; Yokota, Naoshige; Uetake, Kei | Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing | - | AIP Advances | - | Feb-2018 |
| article (author version) | Akazawa, Masamichi; Hasezaki, Taito | Effect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces | - | Physica status solidi B-basic solid state physics | - | May-2018 |
| article (author version) | Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Narita, Tetsuo; Omori, Masato; Suda, Jun; Kachi, Tetsu | Effects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing | - | Physica status solidi B-basic solid state physics | - | 6-Feb-2020 |
| article (author version) | Isobe, Kazuki; Akazawa, Masamichi | Effects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Apr-2020 |
| article (author version) | Akazawa, Masamichi; Murai, Shunta; Kachi, Tetsu | Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN | - | Journal of electronic materials | - | 3-Feb-2022 |
| article | Akazawa, Masamichi; Kitawaki, Yuya | Formation of thermally grown SiO2/GaN interface | - | AIP Advances | - | 13-Aug-2021 |
| article | Akazawa, Masamichi; Hasegawa, Hideki | Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics | - | Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures | - | Jul-2007 |
| article (author version) | Akazawa, Masamichi; Hasegawa, Hideki | High-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers | - | Applied Surface Science | - | 15-Jul-2010 |
| article | Hasegawa, Hideki; Akazawa, Masamichi | Hydrogen sensing characteristics and mechanism of Pd/AlGaN/GaN Schottky diodes subjected to oxygen gettering | - | Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures | - | Jul-2007 |
| article (author version) | Akazawa, Masamichi; Uetake, Kei | Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Jun-2019 |
| article | Isobe, Kazuki; Akazawa, Masamichi | Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode | - | AIP Advances | - | Nov-2018 |
| article (author version) | Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Kachi, Tetsu; Uedono, Akira | Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Jan-2021 |
| article (author version) | Akazawa, Masamichi; Hasegawa, Hideki | MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices | - | Journal of Crystal Growth | - | Apr-2007 |
| article | Akazawa, Masamichi; Chiba, Masahito; Nakano, Takuma | Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN | - | Applied Physics Letters | - | 10-Jun-2013 |
