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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Akazawa, Masamichi; Kamoshida, RyoAnalysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing-Japanese Journal of Applied Physics (JJAP)-1-Sep-2020
articleAkazawa, M.; Amemiya, Y.; Shibata, N.Annealing method for operating quantum-cellular-automaton systems-Journal of Applied Physics-15-Nov-1997
articleAkazawa, Masamichi; Amemiya, YoshihitoBoltzmann machine neuron circuit using single-electron tunneling-Applied Physics Letters-3-Feb-1997
article (author version)Akazawa, Masamichi; Kitajima, Shouhei; Kitawaki, YuyaControl of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation-Japanese Journal of Applied Physics (JJAP)-1-Oct-2019
article (author version)Akazawa, Masamichi; Kitajima, ShouheiControl of plasma-CVD SiO2/InAlN interface by ultrathin atomic-layer-deposited Al2O3 interlayer-Japanese Journal of Applied Physics (JJAP)-1-Aug-2019
article (author version)Suda, Yoshiyuki; Nishimura, T.; Ono, T.; Akazawa, M.; Sakai, Y.; Homma, N.Deposition of fine carbon particles using pulsed ArF laser ablation assisted by inductively coupled plasma-Thin Solid Films-17-Oct-2000
articleAkazawa, Masamichi; Yokota, Naoshige; Uetake, KeiDetection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing-AIP Advances-Feb-2018
articleAkazawa, Masamichi; Tamamura, Yuya; Nukariya, Takahide; Kubo, Kouta; Sato, Taketomo; Narita, Tetsuo; Kachi, TetsuDetection of defect levels in vicinity of Al₂O₃/p-type GaN interface using sub-bandgap-light-assisted capacitance-voltage method-Journal of Applied Physics-16-Nov-2022
article (author version)Akazawa, Masamichi; Hasezaki, TaitoEffect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces-Physica status solidi B-basic solid state physics-May-2018
article (author version)Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Narita, Tetsuo; Omori, Masato; Suda, Jun; Kachi, TetsuEffects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing-Physica status solidi B-basic solid state physics-6-Feb-2020
article (author version)Isobe, Kazuki; Akazawa, MasamichiEffects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers-Japanese Journal of Applied Physics (JJAP)-1-Apr-2020
article (author version)Akazawa, Masamichi; Murai, Shunta; Kachi, TetsuEncapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN-Journal of electronic materials-3-Feb-2022
articleAkazawa, Masamichi; Kitawaki, YuyaFormation of thermally grown SiO2/GaN interface-AIP Advances-13-Aug-2021
articleAkazawa, Masamichi; Hasegawa, HidekiFormation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics-Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures-Jul-2007
article (author version)Akazawa, Masamichi; Hasegawa, HidekiHigh-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers-Applied Surface Science-15-Jul-2010
articleHasegawa, Hideki; Akazawa, MasamichiHydrogen sensing characteristics and mechanism of Pd/AlGaN/GaN Schottky diodes subjected to oxygen gettering-Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures-Jul-2007
article (author version)Akazawa, Masamichi; Uetake, KeiImpact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN-Japanese Journal of Applied Physics (JJAP)-1-Jun-2019
articleIsobe, Kazuki; Akazawa, MasamichiImpact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode-AIP Advances-Nov-2018
article (author version)Hatakeyama, Yuki; Akazawa, MasamichiInterface state density distribution near conduction band edge at Al2O3/Mg-ion-implanted GaN interface formed after activation annealing using AlN cap layer-AIP Advances-21-Dec-2022
article (author version)Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Kachi, Tetsu; Uedono, AkiraLow-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam-Japanese Journal of Applied Physics (JJAP)-1-Jan-2021
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