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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
proceedings (author version)Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiAdvances in Steep-Slope Tunnel FETs---Sep-2016
articleNoborisaka, Jinichiro; Motohisa, Junichi; Fukui, TakashiCatalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy-Applied Physics Letters-23-May-2005
article (author version)Motohisa, J.; Noborisaka, J.; Takeda, J.; Inari, M.; Fukui, T.Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates-Journal of Crystal Growth-10-Dec-2004
articleHua, Bin; Motohisa, Junichi; Ding, Ying; Hara, Shinjiroh; Fukui, TakashiCharacterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy-Applied Physics Letters-24-Sep-2007
articleTomioka, Katsuhiro; Fukui, TakashiCurrent increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length-Applied Physics Letters-19-Feb-2014
articleKim, Hyo Jin; Mothohisa, Junichi; Fukui, TakashiEnergy state of InGaAs quantum dots on SiO2-patterned vicinal substrate-Nanoscale Research Letters-6-Feb-2012
article (author version)Hayashida, Atsushi; Sato, Takuya; Hara, Shinjiro; Motohisa, Junichi; Hiruma, Kenji; Fukui, TakashiFabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires-Journal of Crystal Growth-1-Dec-2010
articleMotohisa, J.; Nakajima, F.; Fukui, T.; van der Wiel, W. G.; Elzerman, J. M.; De Franceschi, S.; Kouwenhoven, L. P.Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors-Applied Physics Letters-15-Apr-2002
articleMohan, Premila; Nakajima, Fumito; Akabori, Masashi; Motohisa, Junichi; Fukui, TakashiFabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy-Applied Physics Letters-28-Jul-2003
articleKim, Hyo Jin; Motohisa, Junichi; Fukui, TakashiFabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates-Applied Physics Letters-30-Dec-2002
articleNakajima, Fumito; Ogasawara, Yuu; Motohisa, Junichi; Fukui, TakashiGaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices-Journal of Applied Physics-1-Sep-2001
article (author version)Ikejiri, Keitaro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, TakashiGaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE-Nanotechnology-22-Mar-2013
article (author version)Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiGrowth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures-Japanese Journal of Applied Physics-Jan-2017
article (author version)Motohisa, J.; Takeda, J.; Inari, M.; Noborisaka, J.; Fukui, T.Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE-Physica E: Low-dimensional Systems and Nanostructures-Jul-2004
article (author version)Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Fukui, TakashiGrowth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE-Journal of crystal growth-1-Feb-2015
articleHara, Shinjiroh; Fukui, TakashiHexagonal ferromagnetic MnAs nanocluster formation on GaInAs∕InP (111)B layers by metal-organic vapor phase epitaxy-Applied Physics Letters-Sep-2006
articleYoshimura, Masatoshi; Nakai, Eiji; Tomioka, Katsuhiro; Fukui, TakashiIndium tin oxide and indium phosphide heterojunction nanowire array solar cells-Applied Physics Letters-9-Dec-2013
articleTomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi; Fukui, TakashiInGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor-Applied physics letters-21-Sep-2020
article (author version)Motohisa, J.; van der Wiel, W. G.; Elzerman, J. M.; De Franceschi, S.; Nakajima, F.; Ogasawara, Y.; Fukui, T.; Kouwenhoven, L. P.Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy-Physica E: Low-dimensional Systems and Nanostructures-Apr-2002
articleIto, Shingo; Hara, Shinjiroh; Wakatsuki, Toshitomo; Fukui, TakashiMagnetic domain characterizations of anisotropic-shaped MnAs nanoclusters position-controlled by selective-area metal-organic vapor phase epitaxy-Applied Physics Letters-15-Jun-2009
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