HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >

Sort by: In order: Results/Page Authors/Record:
Export metadata:
Showing results 1 to 20 of 27
 next >
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiGrowth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures-Japanese Journal of Applied Physics-Jan-2017
articleTomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiRecent Progress in Vertical Si/III-V Tunnel FETs : From Fundamentals to Current-Boosting Technology-ECS Transactions-Oct-2016
proceedings (author version)Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiAdvances in Steep-Slope Tunnel FETs---Sep-2016
article (author version)Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Fukui, TakashiGrowth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE-Journal of crystal growth-1-Feb-2015
articleTomioka, Katsuhiro; Fukui, TakashiRecent progress in integration of III-V nanowire transistors on Si substrate by selective-area growth-Journal of Physics D: Applied Physics-1-Oct-2014
articleTomioka, Katsuhiro; Fukui, TakashiCurrent increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length-Applied Physics Letters-19-Feb-2014
articleYoshimura, Masatoshi; Nakai, Eiji; Tomioka, Katsuhiro; Fukui, TakashiIndium tin oxide and indium phosphide heterojunction nanowire array solar cells-Applied Physics Letters-9-Dec-2013
article (author version)Ikejiri, Keitaro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, TakashiGaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE-Nanotechnology-22-Mar-2013
articleSakuma, Hirotaka; Tomoda, Motonobu; Otsuka, Paul H.; Matsuda, Osamu; Wright, Oliver B.; Fukui, Takashi; Tomioka, Katsuhiro; Veres, Istvan A.Vibrational modes of GaAs hexagonal nanopillar arrays studied with ultrashort optical pulses-Applied Physics Letters-26-Mar-2012
articleKim, Hyo Jin; Mothohisa, Junichi; Fukui, TakashiEnergy state of InGaAs quantum dots on SiO2-patterned vicinal substrate-Nanoscale Research Letters-6-Feb-2012
article (author version)Hayashida, Atsushi; Sato, Takuya; Hara, Shinjiro; Motohisa, Junichi; Hiruma, Kenji; Fukui, TakashiFabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires-Journal of Crystal Growth-1-Dec-2010
articleIto, Shingo; Hara, Shinjiroh; Wakatsuki, Toshitomo; Fukui, TakashiMagnetic domain characterizations of anisotropic-shaped MnAs nanoclusters position-controlled by selective-area metal-organic vapor phase epitaxy-Applied Physics Letters-15-Jun-2009
articleHua, Bin; Motohisa, Junichi; Ding, Ying; Hara, Shinjiroh; Fukui, TakashiCharacterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy-Applied Physics Letters-24-Sep-2007
articleHara, Shinjiroh; Fukui, TakashiHexagonal ferromagnetic MnAs nanocluster formation on GaInAs∕InP (111)B layers by metal-organic vapor phase epitaxy-Applied Physics Letters-Sep-2006
articleMohan, Premila; Motohisa, Junichi; Fukui, TakashiRealization of conductive InAs nanotubes based on lattice-mismatched InP/InAs core-shell nanowires-Applied Physics Letters-2-Jan-2006
articleNoborisaka, Jinichiro; Motohisa, Junichi; Fukui, TakashiCatalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy-Applied Physics Letters-23-May-2005
article (author version)Motohisa, J.; Noborisaka, J.; Takeda, J.; Inari, M.; Fukui, T.Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates-Journal of Crystal Growth-10-Dec-2004
article (author version)Motohisa, J.; Takeda, J.; Inari, M.; Noborisaka, J.; Fukui, T.Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE-Physica E: Low-dimensional Systems and Nanostructures-Jul-2004
articleMohan, Premila; Motohisa, Junichi; Fukui, TakashiRealization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy-Applied Physics Letters-5-Apr-2004
articleNakajima, F.; Miyoshi, Y.; Motohisa, J.; Fukui, T.Single-electron AND/NAND logic circuits based on a self-organized dot network-Applied Physics Letters-29-Sep-2003
Showing results 1 to 20 of 27
 next >

 

Feedback - Hokkaido University