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Showing results 1 to 18 of 18
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleKuribayashi, Saya; Sakoda, Yoshihiro; Kawasaki, Takeshi; Tanaka, Tomohisa; Yamamoto, Naoki; Okamatsu, Masatoshi; Isoda, Norikazu; Tsuda, Yoshimi; Sunden, Yuji; Umemura, Takashi; Nakajima, Noriko; Hasegawa, Hideki; Kida, HiroshiExcessive Cytokine Response to Rapid Proliferation of Highly Pathogenic Avian Influenza Viruses Leads to Fatal Systemic Capillary Leakage in Chickens-PLoS ONE-9-Jul-2013
article (author version)Akazawa, Masamichi; Shiozaki, Nanako; Hasegawa, HidekiX-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces-Journal de Physique IV-2006
articleKotani, Junji; Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, HidekiLateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
article (author version)Matsuo, Kazushi; Negoro, Noboru; Kotani, Junji; Hashizume, Tamotsu; Hasegawa, HidekiPt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure-Applied Surface Science-15-May-2005
article (author version)Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, HidekiSurface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation-Applied Surface Science-15-Mar-2005
article (author version)Kotani, Junji; Hasegawa, Hideki; Hashizume, TamotsuComputer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model-Applied Surface Science-15-Oct-2004
articleKotani, Junji; Hashizume, Tamotsu; Hasegawa, HidekiAnalysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-20-Aug-2004
article (author version)Hashizume, Tamotsu; Hasegawa, HidekiEffects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes-Applied Surface Science-15-Jul-2004
articleHashizume, Tamotsu; Kotani, Junji; Hasegawa, HidekiLeakage mechanism in GaN and AlGaN Schottky interfaces-Applied Physics Letters-14-Jul-2004
articleHasegawa, Hideki; Inagaki, Takanori; Ootomo, Shinya; Hashizume, TamotsuMechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-5-Aug-2003
articleHashizume, Tamotsu; Ootomo, Shinya; Inagaki, Takanori; Hasegawa, HidekiSurface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-5-Aug-2003
article (author version)Oyama, Susumu; Hashizume, Tamotsu; Hasegawa, HidekiMechanism of current leakage through metal/n-GaN interfaces-Applied Surface Science-8-May-2002
articleHashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, HidekiChemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2001
bulletin (article)岸田, 基也; 熊倉, 一英; 中越, 一彰; 山崎, 高宏; 本久, 順一; 福井, 孝志; 長谷川, 英機選択成長によるGaAs及びAlGaAs立体構造の作製と評価Fabrication and Characterization of GaAs and AlGaAs Micro-Pyramids by Selective MOCVD北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University29-Jul-1994
bulletin (article)横山, 勇治; 大野, 英男; 長谷川, 英機; 下妻, 光夫「非晶質シリコン薄膜トランジスタのドレイン電流ドリフト特性とその機構」Characterization and Mechanism of Drain Current Drift in Hydrogenated Amorphous Silicon Thin Film Transistor北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University30-May-1988
bulletin (article)橋詰, 保; 池田, 英治; 赤津, 祐史; 大野, 英男; 長谷川, 英機MOCVD成長によるアンドープGaAs中の電子トラップDeep Electron Traps in Undoped GaAs Grown by MOCVD北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University31-May-1984
bulletin (article)下妻, 光夫; 長谷川, 英機; 田頭, 博昭アルゴン-シランと窒素-シラン混合ガスのグロー放電発光スペクトルEmission Spectrum of the Glow Discharge in Argon-Silane and Nitrogen-Silane Mixtures北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University31-Oct-1983
bulletin (article)下妻, 光夫; 田頭, 博昭; 長谷川, 英機N2とCH4の混合ガス中における電離電流の増倍と電離係数Ionization Current Growth and the Ionization Coefficients in N2 and CH4 Mixtures北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University30-May-1981
Showing results 1 to 18 of 18

 

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