| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article | Kuribayashi, Saya; Sakoda, Yoshihiro; Kawasaki, Takeshi; Tanaka, Tomohisa; Yamamoto, Naoki; Okamatsu, Masatoshi; Isoda, Norikazu; Tsuda, Yoshimi; Sunden, Yuji; Umemura, Takashi; Nakajima, Noriko; Hasegawa, Hideki; Kida, Hiroshi | Excessive Cytokine Response to Rapid Proliferation of Highly Pathogenic Avian Influenza Viruses Leads to Fatal Systemic Capillary Leakage in Chickens | - | PLoS ONE | - | 9-Jul-2013 |
| article (author version) | Akazawa, Masamichi; Shiozaki, Nanako; Hasegawa, Hideki | X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces | - | Journal de Physique IV | - | 2006 |
| article | Kotani, Junji; Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, Hideki | Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2005 |
| article (author version) | Matsuo, Kazushi; Negoro, Noboru; Kotani, Junji; Hashizume, Tamotsu; Hasegawa, Hideki | Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure | - | Applied Surface Science | - | 15-May-2005 |
| article (author version) | Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki | Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation | - | Applied Surface Science | - | 15-Mar-2005 |
| article (author version) | Kotani, Junji; Hasegawa, Hideki; Hashizume, Tamotsu | Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model | - | Applied Surface Science | - | 15-Oct-2004 |
| article | Kotani, Junji; Hashizume, Tamotsu; Hasegawa, Hideki | Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | 20-Aug-2004 |
| article (author version) | Hashizume, Tamotsu; Hasegawa, Hideki | Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes | - | Applied Surface Science | - | 15-Jul-2004 |
| article | Hashizume, Tamotsu; Kotani, Junji; Hasegawa, Hideki | Leakage mechanism in GaN and AlGaN Schottky interfaces | - | Applied Physics Letters | - | 14-Jul-2004 |
| article | Hasegawa, Hideki; Inagaki, Takanori; Ootomo, Shinya; Hashizume, Tamotsu | Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | 5-Aug-2003 |
| article | Hashizume, Tamotsu; Ootomo, Shinya; Inagaki, Takanori; Hasegawa, Hideki | Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | 5-Aug-2003 |
| article (author version) | Oyama, Susumu; Hashizume, Tamotsu; Hasegawa, Hideki | Mechanism of current leakage through metal/n-GaN interfaces | - | Applied Surface Science | - | 8-May-2002 |
| article | Hashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, Hideki | Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2001 |
| bulletin (article) | 岸田, 基也; 熊倉, 一英; 中越, 一彰; 山崎, 高宏; 本久, 順一; 福井, 孝志; 長谷川, 英機 | 選択成長によるGaAs及びAlGaAs立体構造の作製と評価 | Fabrication and Characterization of GaAs and AlGaAs Micro-Pyramids by Selective MOCVD | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 29-Jul-1994 |
| bulletin (article) | 横山, 勇治; 大野, 英男; 長谷川, 英機; 下妻, 光夫 | ｢非晶質シリコン薄膜トランジスタのドレイン電流ドリフト特性とその機構｣ | Characterization and Mechanism of Drain Current Drift in Hydrogenated Amorphous Silicon Thin Film Transistor | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 30-May-1988 |
| bulletin (article) | 橋詰, 保; 池田, 英治; 赤津, 祐史; 大野, 英男; 長谷川, 英機 | MOCVD成長によるアンドープGaAs中の電子トラップ | Deep Electron Traps in Undoped GaAs Grown by MOCVD | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 31-May-1984 |
| bulletin (article) | 下妻, 光夫; 長谷川, 英機; 田頭, 博昭 | アルゴン-シランと窒素-シラン混合ガスのグロー放電発光スペクトル | Emission Spectrum of the Glow Discharge in Argon-Silane and Nitrogen-Silane Mixtures | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 31-Oct-1983 |
| bulletin (article) | 下妻, 光夫; 田頭, 博昭; 長谷川, 英機 | N2とCH4の混合ガス中における電離電流の増倍と電離係数 | Ionization Current Growth and the Ionization Coefficients in N2 and CH4 Mixtures | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 30-May-1981 |
