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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleHashizume, Tamotsu; Kaneki, Shota; Oyobiki, Tatsuya; Ando, Yuji; Sasaki, Shota; Nishiguchi, KenyaEffects of postmetallization annealing on interface properties of Al2O3/GaN structures-Applied Physics Express (APEX)-Dec-2018
articleHashizume, Tamotsu; Nishiguchi, Kenya; Kaneki, Shota; Kuzmik, Jan; Yatabe, ZenjiState of the art on gate insulation and surface passivation for GaN-based power HEMTs-Materials science in semiconductor processing-May-2018
articleNishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, TamotsuCurrent linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors-Japanese Journal of Applied Physics (JJAP)-Oct-2017
articleKumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo; Hashizume, TamotsuPrecise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process-Journal of Applied Physics-14-May-2017
articleMatys, M.; Adamowicz, B.; Domanowska, A.; Michalewicz, A.; Stoklas, R.; Akazawa, M.; Yatabe, Z.; Hashizume, T.On the origin of interface states at oxide/III-nitride heterojunction interfaces-Journal of Applied Physics-14-Dec-2016
articleKaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, TamotsuHighly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates-Applied physics letters-18-Oct-2016
articleYatabe, Zenji; Asubar, Joel T; Hashizume, TamotsuInsulated gate and surface passivation structures for GaN-based power transistors-Journal of Physics D: Applied Physics-7-Sep-2016
articleMatys, M.; Stoklas, R.; Kuzmik, J.; Adamowicz, B.; Yatabe, Z.; Hashizume, T.Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures-Journal of Applied Physics-31-May-2016
article (author version)Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo; Hashizume, TamotsuInterface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces-Physica status solidi A applications and materials science-May-2015
articleAsubar, Joel T.; Yatabe, Zenji; Hashizume, TamotsuReduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors-Applied Physics Letters-4-Aug-2014
articleHori, Y.; Yatabe, Z.; Hashizume, T.Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors-Journal of Applied Physics-27-Dec-2013
article (author version)Ohi, Kota; Asubar, Joel Tacla; Nishiguchi, Kenya; Hashizume, TamotsuCurrent Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs-IEEE Transactions on Electron Devices-Oct-2013
articleMatys, M.; Adamowicz, B.; Hori, Y.; Hashizume, T.Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method-Applied Physics Letters-8-Jul-2013
articleMatys, M.; Adamowicz, B.; Hashizume, T.Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement-Applied Physics Letters-3-Dec-2012
articleYoshida, Toshiyuki; Hashizume, TamotsuStudies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method-Applied Physics Letters-17-Sep-2012
articleHu, Cheng-Yu; Hashizume, TamotsuNon-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress-Journal of Applied Physics-15-Apr-2012
articleSugawara, Katsuya; Kotani, Junji; Hashizume, TamotsuNear-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition-Applied Physics Letters-13-Apr-2009
articleShiozaki, Nanako; Hashizume, TamotsuImprovements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution-Journal of Applied Physics-15-Mar-2009
articleKimura, Takeshi; Hashizume, TamotsuEffect of carbon incorporation on electrical properties of n-type GaN surfaces-Journal of Applied Physics-Jan-2009
article (author version)Ooyama, Kimihito; Kato, Hiroki; Miczek, Marcin; Hashizume, TamotsuTemperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure-Japanese Journal of Applied Physics-25-Jul-2008
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