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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, YasuoSmooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx-ACS Applied Materials & Interfaces-22-Jan-2018
articleIshikawa, T.; Marukame, T.; Kijima, H.; Matsuda, K.-I.; Uemura, T.; Arita, M.; Yamamoto, M.Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co[sub 2]MnSi thin film and a MgO tunnel barrier-Applied Physics Letters-6-Nov-2006
article (author version)Tsurumaki-Fukuchi, Atsushi; Tsubaki, Keiji; Katase, Takayoshi; Kamiya, Toshio; Masashi, Arita; Takahashi, YasuoStable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO4-ACS applied materials & interfaces-24-Jun-2020
article (author version)Hosoya, H.; Arita, M.; Hamada, K.; Takahashi, Y.; Higashi, K.; Oda, K.; Ueda, M.Structural and electromagnetic characterizations of Fe-SrF2 granular films-Journal of Physics D: Applied Physics-21-Dec-2006
articleIshikawa, Takayuki; Marukame, Takao; Matsuda, Ken-ichi; Uemura, Tetsuya; Arita, Masashi; Yamamoto, MasafumiStructural and magnetic properties of epitaxially grown full-Heusler alloy Co2MnGe thin films deposited using magnetron sputtering-Journal of applied physics-15-Apr-2006
article (author version)Arita, Masashi; Ohno, Yuuki; Takahashi, YasuoSwitching of Cu/MoOx/TiN CBRAM occurred at MoOx/TiN interface-Physica Status Solidi A applications and materials science-Feb-2016
articleArita, Masashi; Takahashi, Akihito; Ohno, Yuuki; Nakane, Akitoshi; Tsurumaki-Fukuchi, Atsushi; Takahashi, YasuoSwitching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM-Scientific Reports-27-Nov-2015
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