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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 41 to 47 of 47
Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | article | Hu, Bing; Moges, Kidist; Honda, Yusuke; Liu, Hong-xi; Uemura, Tetsuya; Yamamoto, Masafumi; Inoue, Jun-ichiro; Shirai, Masafumi | Temperature dependence of spin-dependent tunneling conductance of magnetic tunnel junctions with half-metallic Co2MnSi electrodes | - | Physical Review B | - | 23-Sep-2016 |
article | Uemura, T.; Baba, T. | A three-valued D-flip-flop and shift register using multiple-junction surface tunnel transistors | - | IEEE Transactions on Electron Devices | - | Aug-2002 |
article | Uemura, Tetsuya; Yamamoto, Masafumi | Three-valued magnetic tunnel junction for nonvolatile ternary content addressable memory application | - | Journal of Applied Physics | - | 23-Dec-2008 |
article (author version) | Lin, Zhichao; Kondo, Kenji; Yamamoto, Masafumi; Uemura, Tetsuya | Transient analysis of oblique Hanle signals observed in GaAs | - | Japanese Journal of Applied Physics (JJAP) | - | Apr-2016 |
article | Matsuda, K-i; Akimoto, Y.; Uemura, T.; Yamamoto, M. | Transport properties of Nb/PdNi bilayers and Nb/PdNi/Nb Josephson junctions | - | Journal of Physics: Conference Series | - | 31-Mar-2009 |
article | Marukame, Takao; Ishikawa, Takayuki; Matsuda, Ken-ichi; Uemura, Tetsuya; Yamamoto, Masafumi | Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrier | - | Journal of applied physics | - | 15-Apr-2006 |
article | Uemura, Tetsuya; Imai, Yosuke; Harada, Masanobu; Matsuda, Ken-ichi; Yamamoto, Masafumi | Tunneling anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctions | - | Applied Physics Letters | - | 4-May-2009 |
Showing results 41 to 47 of 47
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