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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleHu, Bing; Moges, Kidist; Honda, Yusuke; Liu, Hong-xi; Uemura, Tetsuya; Yamamoto, Masafumi; Inoue, Jun-ichiro; Shirai, MasafumiTemperature dependence of spin-dependent tunneling conductance of magnetic tunnel junctions with half-metallic Co2MnSi electrodes-Physical Review B-23-Sep-2016
articleUemura, T.; Baba, T.A three-valued D-flip-flop and shift register using multiple-junction surface tunnel transistors-IEEE Transactions on Electron Devices-Aug-2002
articleUemura, Tetsuya; Yamamoto, MasafumiThree-valued magnetic tunnel junction for nonvolatile ternary content addressable memory application-Journal of Applied Physics-23-Dec-2008
article (author version)Lin, Zhichao; Kondo, Kenji; Yamamoto, Masafumi; Uemura, TetsuyaTransient analysis of oblique Hanle signals observed in GaAs-Japanese Journal of Applied Physics (JJAP)-Apr-2016
articleMatsuda, K-i; Akimoto, Y.; Uemura, T.; Yamamoto, M.Transport properties of Nb/PdNi bilayers and Nb/PdNi/Nb Josephson junctions-Journal of Physics: Conference Series-31-Mar-2009
articleMarukame, Takao; Ishikawa, Takayuki; Matsuda, Ken-ichi; Uemura, Tetsuya; Yamamoto, MasafumiTunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrier-Journal of applied physics-15-Apr-2006
articleUemura, Tetsuya; Imai, Yosuke; Harada, Masanobu; Matsuda, Ken-ichi; Yamamoto, MasafumiTunneling anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctions-Applied Physics Letters-4-May-2009
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