|
|
Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 21 to 31 of 31
| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article (author version) | Akazawa, Masamichi; Hasegawa, Hideki | MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices | - | Journal of Crystal Growth | - | Apr-2007 |
| article | Akazawa, Masamichi; Chiba, Masahito; Nakano, Takuma | Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN | - | Applied Physics Letters | - | 10-Jun-2013 |
| article | Nakano, Takuma; Akazawa, Masamichi | Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment | - | IEICE Transactions On Electronics | - | May-2013 |
| article | Matys, M.; Adamowicz, B.; Domanowska, A.; Michalewicz, A.; Stoklas, R.; Akazawa, M.; Yatabe, Z.; Hashizume, T. | On the origin of interface states at oxide/III-nitride heterojunction interfaces | - | Journal of Applied Physics | - | 14-Dec-2016 |
| article (author version) | Shiozaki, Nanako; Sato, Taketomo; Akazawa, Masamichi; Hasegawa, Hideki | Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices | - | Journal de Physique IV | - | Mar-2006 |
| article (author version) | Suda, Yoshiyuki; Ono, T.; Akazawa, M.; Sakai, Y.; Tsujino, J.; Homma, N. | Preparation of carbon nanoparticles by plasma-assisted pulsed laser deposition method : size and binding energy dependence on ambient gas pressure and plasma condition | - | Thin Solid Films | - | 1-Aug-2002 |
| article (author version) | Akazawa, Masamichi; Seino, Atsushi | Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers | - | Physica status solidi B-basic solid state physics | - | Aug-2017 |
| article | Akazawa, M.; Matsuyama, T.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N. | Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy | - | Applied Physics Letters | - | 29-Mar-2010 |
| article | Akazawa, M.; Nakano, T. | Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition | - | Applied Physics Letters | - | 17-Sep-2012 |
| article (author version) | Akazawa, Masamichi; Shiozaki, Nanako; Hasegawa, Hideki | X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces | - | Journal de Physique IV | - | 2006 |
| article (author version) | Akazawa, Masamichi; Wu, Encheng; Sakurai, Hideki; Bockowski, Michal; Narita, Tetsuo; Kachi, Tetsu | X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Mar-2021 |
Showing results 21 to 31 of 31
|
