| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article (author version) | Kasai, Seiya; Hasegawa, Hideki | Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Feb-1996 |
| article (author version) | Seiya, Kasai; Yumoto, Miki; Hasegawa, Hideki | Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach | - | Solid-State Electronics | - | Feb-2003 |
| article (author version) | Kasai, Seiya; Hasegawa, Hideki | GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture | - | Physica E: Low-dimensional Systems and Nanostructures | - | Mar-2002 |
| article (author version) | Tanaka, Takayuki; Nakano, Yuki; Kasai, Seiya | GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets | - | Japanese Journal of Applied Physics(JJAP) | - | Jun-2013 |
| article (author version) | Kasai, Seiya; Hasegawa, Hideki | GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Mar-2001 |
| article (author version) | Kasai, S.; Kotani, J.; Hashizume, T.; Hasegawa, H. | Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates | - | Journal of Electronic Materials | - | Apr-2006 |
| article (author version) | Yumoto, Miki; Kasai, Seiya; Hasegawa, Hideki | Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates | - | Applied Surface Science | - | 8-May-2002 |
| article | HASEGAWA, Hideki; KASAI, Seiya; SATO, Taketomo | Hexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs | - | IEICE TRANSACTIONS on Electronics | - | Oct-2004 |
| article (author version) | Hasegawa, Hideki; Kasai, Seiya | Hexagonal Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires | - | Physica E: Low-dimensional Systems and Nanostructures | - | Oct-2001 |
| article (author version) | Kasai, Seiya; Hasegawa, Hideki | III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks | - | Applied Surface Science | - | 8-May-2002 |
| article (author version) | Kuroda, Ryota; Kasai, Seiya | Implementation of a noise-coexistence threshold logic architecture on a GaAs-based nanowire FET network | - | International journal of parallel, emergent and distributed systems | - | May-2017 |
| article | Kotani, Junji; Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, Hideki | Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2005 |
| article | Kotani, Junji; Tajima, Masafumi; Kasai, Seiya; Hashizume, Tamotsu | Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures | - | Applied Physics Letters | - | 27-Aug-2007 |
| article | Kasai, Seiya; Nakamura, Tatsuya; Shiratori, Yuta | Multipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates | - | Applied Physics Letters | - | 14-May-2007 |
| article (author version) | Kasai, Seiya; Nakamura, Tatsuya; Shiratori, Yuta | Multiple Path Switching Device Utilizing Size-Controlled Nano-Schottky Wrap Gates for MDD-Based Logic Circuits | - | Journal of Multiple-Valued Logic and Soft Computing | - | 2007 |
| article (author version) | Tamura, Takahiro; Kotani, Junji; Kasai, Seiya; Hashizume, Tamotsu | Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor | - | Applied Physics Express | - | 25-Feb-2008 |
| article | Yong, Gui Xie.; Kasai, S.; Takahashi, H.; Chao, Jiang.; Hasegawa, H. | A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance | - | IEEE Electron Device Letters | - | Jul-2001 |
| article (author version) | Yumoto, Miki; Kasai, Seiya; Hasegawa, Hideki | Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-2002 |
| article (author version) | Shiratori, Yuta; Miura, Kensuke; Kasai, Seiya | Programmable nano-switch array using SiN/GaAs interface traps on a GaAs nanowire network for reconfigurable BDD logic circuits | - | Microelectronic Engineering | - | Aug-2011 |
| article (author version) | Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu | Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits | - | Journal of Physics: Conference Series | - | 2006 |
