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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Kasai, Seiya; Hasegawa, HidekiGaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture-Physica E: Low-dimensional Systems and Nanostructures-Mar-2002
article (author version)Tanaka, Takayuki; Nakano, Yuki; Kasai, SeiyaGaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets-Japanese Journal of Applied Physics(JJAP)-Jun-2013
article (author version)Kasai, Seiya; Hasegawa, HidekiGaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Mar-2001
article (author version)Kasai, S.; Kotani, J.; Hashizume, T.; Hasegawa, H.Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates-Journal of Electronic Materials-Apr-2006
article (author version)Yumoto, Miki; Kasai, Seiya; Hasegawa, HidekiGraph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates-Applied Surface Science-8-May-2002
articleHASEGAWA, Hideki; KASAI, Seiya; SATO, TaketomoHexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs-IEICE TRANSACTIONS on Electronics-Oct-2004
article (author version)Hasegawa, Hideki; Kasai, SeiyaHexagonal Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires-Physica E: Low-dimensional Systems and Nanostructures-Oct-2001
article (author version)Kasai, Seiya; Hasegawa, HidekiIII-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks-Applied Surface Science-8-May-2002
article (author version)Kuroda, Ryota; Kasai, SeiyaImplementation of a noise-coexistence threshold logic architecture on a GaAs-based nanowire FET network-International journal of parallel, emergent and distributed systems-May-2017
articleKotani, Junji; Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, HidekiLateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
articleKotani, Junji; Tajima, Masafumi; Kasai, Seiya; Hashizume, TamotsuMechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures-Applied Physics Letters-27-Aug-2007
articleKasai, Seiya; Nakamura, Tatsuya; Shiratori, YutaMultipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates-Applied Physics Letters-14-May-2007
article (author version)Kasai, Seiya; Nakamura, Tatsuya; Shiratori, YutaMultiple Path Switching Device Utilizing Size-Controlled Nano-Schottky Wrap Gates for MDD-Based Logic Circuits-Journal of Multiple-Valued Logic and Soft Computing-2007
article (author version)Tamura, Takahiro; Kotani, Junji; Kasai, Seiya; Hashizume, TamotsuNearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor-Applied Physics Express-25-Feb-2008
articleYong, Gui Xie.; Kasai, S.; Takahashi, H.; Chao, Jiang.; Hasegawa, H.A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance-IEEE Electron Device Letters-Jul-2001
article (author version)Yumoto, Miki; Kasai, Seiya; Hasegawa, HidekiNovel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Apr-2002
article (author version)Shiratori, Yuta; Miura, Kensuke; Kasai, SeiyaProgrammable nano-switch array using SiN/GaAs interface traps on a GaAs nanowire network for reconfigurable BDD logic circuits-Microelectronic Engineering-Aug-2011
article (author version)Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, TamotsuProperties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits-Journal of Physics: Conference Series-2006
article (author version)Endo, Makoto; Jin, Zhi; Kasai, Seiya; Hasegawa, HidekiReactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Apr-2002
article (author version)Shirata, Kento; Inden, Yuki; Kasai, Seiya; Oya, Takahide; Hagiwara, Yosuke; Kaeriyama, Shunichi; Nakamura, HideyukiRobust myoelectric signal detection based on stochastic resonance using multiple-surface-electrode array made of carbon nanotube composite paper-Japanese Journal of Applied Physics(JJAP)-Apr-2016
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