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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, JunichiGrowth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy-Journal of Crystal Growth-15-Apr-2017
articleTomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi; Fukui, TakashiInGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor-Applied physics letters-21-Sep-2020
article (author version)Motohisa, J.; van der Wiel, W. G.; Elzerman, J. M.; De Franceschi, S.; Nakajima, F.; Ogasawara, Y.; Fukui, T.; Kouwenhoven, L. P.Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy-Physica E: Low-dimensional Systems and Nanostructures-Apr-2002
articleDorenbos, S. N.; Sasakura, H.; van Kouwen, M. P.; Akopian, N.; Adachi, S.; Namekata, N.; Jo, M.; Motohisa, J.; Kobayashi, Y.; Tomioka, K.; Fukui, T.; Inoue, S.; Kumano, H.; Natarajan, C. M.; Hadfield, R. H.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V.; Suemune, I.Position controlled nanowires for infrared single photon emission-Applied Physics Letters-25-Oct-2010
articleTomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiRational synthesis of atomically thin quantum structures in nanowires based on nucleation processes-Scientific reports-1-Jul-2020
articleMohan, Premila; Motohisa, Junichi; Fukui, TakashiRealization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy-Applied Physics Letters-5-Apr-2004
articleTomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiRecent Progress in Vertical Si/III-V Tunnel FETs : From Fundamentals to Current-Boosting Technology-ECS Transactions-Oct-2016
articleYoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Chiba, Kohei; Motohisa, JunichiSelective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications-ECS Transactions-Oct-2016
articleNakajima, F.; Miyoshi, Y.; Motohisa, J.; Fukui, T.Single-electron AND/NAND logic circuits based on a self-organized dot network-Applied Physics Letters-29-Sep-2003
article (author version)Shougo, Yanase; Hirotaka, Sasakura; Shinjiro, Hara; Junichi, MotohisaSingle-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires-Japanese Journal of Applied Physics-17-Feb-2017
articlevan der Wiel, W. G.; De Franceschi, S.; Elzerman, J. M.; Tarucha, S.; Kouwenhoven, L. P.; Motohisa, J.; Nakajima, F.; Fukui, T.Two-Stage Kondo Effect in a Quantum Dot at a High Magnetic Field-Physical Review Letters-25-Mar-2002
articlePal, B.; Goto, K.; Ikezawa, M.; Masumoto, Y.; Mohan, P.; Motohisa, J.; Fukui, T.Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires-Applied Physics Letters-Aug-2008
bulletin (article)岸田, 基也; 熊倉, 一英; 中越, 一彰; 山崎, 高宏; 本久, 順一; 福井, 孝志; 長谷川, 英機選択成長によるGaAs及びAlGaAs立体構造の作製と評価Fabrication and Characterization of GaAs and AlGaAs Micro-Pyramids by Selective MOCVD北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University29-Jul-1994
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