| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article (author version) | Tamura, Takahiro; Kotani, Junji; Kasai, Seiya; Hashizume, Tamotsu | Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor | - | Applied Physics Express | - | 25-Feb-2008 |
| article | Hu, Cheng-Yu; Hashizume, Tamotsu | Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress | - | Journal of Applied Physics | - | 15-Apr-2012 |
| article | Matys, M.; Adamowicz, B.; Domanowska, A.; Michalewicz, A.; Stoklas, R.; Akazawa, M.; Yatabe, Z.; Hashizume, T. | On the origin of interface states at oxide/III-nitride heterojunction interfaces | - | Journal of Applied Physics | - | 14-Dec-2016 |
| article | Kumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo; Hashizume, Tamotsu | Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process | - | Journal of Applied Physics | - | 14-May-2017 |
| article (author version) | Matsuo, Kazushi; Negoro, Noboru; Kotani, Junji; Hashizume, Tamotsu; Hasegawa, Hideki | Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure | - | Applied Surface Science | - | 15-May-2005 |
| article | Asubar, Joel T.; Yatabe, Zenji; Hashizume, Tamotsu | Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors | - | Applied Physics Letters | - | 4-Aug-2014 |
| article (author version) | Kimura, Takeshi; Ootomo, Shinya; Nomura, Takehiko; Yoshida, Seikoh; Hashizume, Tamotsu | Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | Mar-2007 |
| article | Hashizume, Tamotsu; Nishiguchi, Kenya; Kaneki, Shota; Kuzmik, Jan; Yatabe, Zenji | State of the art on gate insulation and surface passivation for GaN-based power HEMTs | - | Materials science in semiconductor processing | - | May-2018 |
| article | Yoshida, Toshiyuki; Hashizume, Tamotsu | Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method | - | Applied Physics Letters | - | 17-Sep-2012 |
| article (author version) | Oikawa, Takeshi; Ishikawa, Fumitaro; Sato, Taketomo; Hashizume, Tamotsu | Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates | - | Applied Surface Science | - | 15-May-2005 |
| article | Hashizume, Tamotsu; Ootomo, Shinya; Hasegawa, Hideki | Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric | - | Applied Physics Letters | - | 6-Oct-2003 |
| article (author version) | Hashizume, Tamotsu; Kotani, Junji; Basile, Alberto; Kaneko, Masamitsu | Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | Feb-2006 |
| article | Hashizume, Tamotsu | Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy | - | Applied Physics Letters | - | 23-Sep-2002 |
| article | Ootomo, S.; Hashizume, T.; Hasegawa, H. | Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer | - | Physica Status Solidi (a) | - | 22-Nov-2001 |
| article | Hashizume, Tamotsu; Ootomo, Shinya; Inagaki, Takanori; Hasegawa, Hideki | Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | 5-Aug-2003 |
| article (author version) | Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki | Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation | - | Applied Surface Science | - | 15-Mar-2005 |
| article (author version) | Ooyama, Kimihito; Kato, Hiroki; Miczek, Marcin; Hashizume, Tamotsu | Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure | - | Japanese Journal of Applied Physics | - | 25-Jul-2008 |
