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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleMohan, Premila; Nakajima, Fumito; Akabori, Masashi; Motohisa, Junichi; Fukui, TakashiFabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy-Applied Physics Letters-28-Jul-2003
articleKim, Hyo Jin; Motohisa, Junichi; Fukui, TakashiFabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates-Applied Physics Letters-30-Dec-2002
articleMotohisa, J.; Nakajima, F.; Fukui, T.; van der Wiel, W. G.; Elzerman, J. M.; De Franceschi, S.; Kouwenhoven, L. P.Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors-Applied Physics Letters-15-Apr-2002
article (author version)Motohisa, J.; van der Wiel, W. G.; Elzerman, J. M.; De Franceschi, S.; Nakajima, F.; Ogasawara, Y.; Fukui, T.; Kouwenhoven, L. P.Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy-Physica E: Low-dimensional Systems and Nanostructures-Apr-2002
articlevan der Wiel, W. G.; De Franceschi, S.; Elzerman, J. M.; Tarucha, S.; Kouwenhoven, L. P.; Motohisa, J.; Nakajima, F.; Fukui, T.Two-Stage Kondo Effect in a Quantum Dot at a High Magnetic Field-Physical Review Letters-25-Mar-2002
articleNakajima, Fumito; Ogasawara, Yuu; Motohisa, Junichi; Fukui, TakashiGaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices-Journal of Applied Physics-1-Sep-2001
bulletin (article)岸田, 基也; 熊倉, 一英; 中越, 一彰; 山崎, 高宏; 本久, 順一; 福井, 孝志; 長谷川, 英機選択成長によるGaAs及びAlGaAs立体構造の作製と評価Fabrication and Characterization of GaAs and AlGaAs Micro-Pyramids by Selective MOCVD北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University29-Jul-1994
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