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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 41 to 49 of 49
| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article | XIE, Yong-Gui; KASAI, Seiya; TAKAHASHI, Hiroshi; JIANG, Chao; HASEGAWA, Hideki | Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer | - | IEICE Transactions on Electronics | - | Oct-2001 |
| article | Yong, Gui Xie.; Kasai, S.; Takahashi, H.; Chao, Jiang.; Hasegawa, H. | A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance | - | IEEE Electron Device Letters | - | Jul-2001 |
| article (author version) | Kasai, Seiya; Neguro, Noboru; Hasegawa, Hideki | Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors | - | Applied Surface Science | - | 15-May-2001 |
| article (author version) | Kasai, Seiya; Hasegawa, Hideki | GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Mar-2001 |
| article (author version) | Sato, Taketomo; Kasai, Seiya; Hasegawa, Hideki | Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process | - | Applied Surface Science | - | 2001 |
| article (author version) | Sato, Taketomo; Kasai, Seiya; Okada, Hiroshi; Hasegawa, Hideki | Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Jul-2000 |
| article (author version) | Kasai, Seiya; Jinushi, Kei-ichiroh; Tomozawa, Hidemasa; Hasegawa, Hideki | Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Mar-1997 |
| article (author version) | Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, Hideki | Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Dec-1996 |
| article (author version) | Kasai, Seiya; Hasegawa, Hideki | Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Feb-1996 |
Showing results 41 to 49 of 49
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