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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleSato, Taketomo; Yoshizawa, Naoki; Okazaki, Hiroyuki; Hashizume, TamotsuLow Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching-ECS Transactions-2010
articleSato, Taketomo; Mizohata, Akinori; Hashizume, TamotsuElectrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors-Journal of The Electrochemical Society-2010
article (author version)Yoshizawa, Naoki; Sato, Taketomo; Hashizume, TamotsuFundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors-Japanese Journal of Applied Physics-Sep-2009
article (author version)Sato, Taketomo; Mizohata, Akinori; Yoshizawa, Naoki; Hashizume, TamotsuAmperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures-Applied Physics Express-May-2008
articleSato, Taketomo; Mizohata, AkinoriPhotoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures-Electrochemical and Solid-State Letters-20-Feb-2008
article (author version)Shiozaki, Nanako; Sato, Taketomo; Hashizume, TamotsuFormation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Apr-2007
articleSato, Taketomo; Fujino, Toshiyuki; Hashizume, TamotsuElectrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions-Electrochemical and Solid-State Letters-2007
articleSato, Taketomo; Oikawa, Takeshi; Hasegawa, Hideki; Hashizume, TamotsuSelective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism-Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures-26-Jul-2006
articleKokawa, Takuya; Sato, Taketomo; Hasegawa, Hideki; Hashizume, TamotsuLiquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure-Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures-25-Jul-2006
article (author version)Sato, Taketomo; Fujino, Toshiyuki; Hasegawa, HidekiSelf-assembled formation of uniform InP nanopore arrays by electrochemical anodization in HCl based electrolyte-Applied Surface Science-30-May-2006
article (author version)Shiozaki, Nanako; Sato, Taketomo; Akazawa, Masamichi; Hasegawa, HidekiPrecisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices-Journal de Physique IV-Mar-2006
articleSato, Taketomo; Tamai, Isao; Hasegawa, HidekiGrowth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
articleShiozaki, Nanako; Sato, Taketomo; Hasegawa, HidekiEffects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
article (author version)Hasegawa, Hideki; Sato, TaketomoElectrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures-Electrochimica Acta-20-May-2005
article (author version)Oikawa, Takeshi; Ishikawa, Fumitaro; Sato, Taketomo; Hashizume, TamotsuStudy on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates-Applied Surface Science-15-May-2005
article (author version)Tamai, Isao; Sato, Taketomo; Hasegawa, HidekiCross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers-Apr-2005
article (author version)Sato, Taketomo; Oikawa, Takeshi; Hasegawa, HidekiGrowth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers-Apr-2005
article (author version)Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, HidekiSurface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation-Applied Surface Science-15-Mar-2005
articleHASEGAWA, Hideki; KASAI, Seiya; SATO, TaketomoHexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs-IEICE TRANSACTIONS on Electronics-Oct-2004
article (author version)Sato, Taketomo; Tamai, Isao; Yoshida, Souichi; Hasegawa, HidekiEvolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy-Applied Surface Science-15-Jul-2004
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