| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article (author version) | Sato, Taketomo; Mizohata, Akinori; Yoshizawa, Naoki; Hashizume, Tamotsu | Amperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures | - | Applied Physics Express | - | May-2008 |
| article | Sato, Taketomo; Mizohata, Akinori | Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures | - | Electrochemical and Solid-State Letters | - | 20-Feb-2008 |
| article (author version) | Shiozaki, Nanako; Sato, Taketomo; Hashizume, Tamotsu | Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-2007 |
| article | Sato, Taketomo; Fujino, Toshiyuki; Hashizume, Tamotsu | Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions | - | Electrochemical and Solid-State Letters | - | 2007 |
| article | Sato, Taketomo; Oikawa, Takeshi; Hasegawa, Hideki; Hashizume, Tamotsu | Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism | - | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures | - | 26-Jul-2006 |
| article | Kokawa, Takuya; Sato, Taketomo; Hasegawa, Hideki; Hashizume, Tamotsu | Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure | - | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures | - | 25-Jul-2006 |
| article (author version) | Sato, Taketomo; Fujino, Toshiyuki; Hasegawa, Hideki | Self-assembled formation of uniform InP nanopore arrays by electrochemical anodization in HCl based electrolyte | - | Applied Surface Science | - | 30-May-2006 |
| article (author version) | Shiozaki, Nanako; Sato, Taketomo; Akazawa, Masamichi; Hasegawa, Hideki | Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices | - | Journal de Physique IV | - | Mar-2006 |
| article | Sato, Taketomo; Tamai, Isao; Hasegawa, Hideki | Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2005 |
| article | Shiozaki, Nanako; Sato, Taketomo; Hasegawa, Hideki | Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2005 |
| article (author version) | Hasegawa, Hideki; Sato, Taketomo | Electrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures | - | Electrochimica Acta | - | 20-May-2005 |
| article (author version) | Oikawa, Takeshi; Ishikawa, Fumitaro; Sato, Taketomo; Hashizume, Tamotsu | Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates | - | Applied Surface Science | - | 15-May-2005 |
| article (author version) | Tamai, Isao; Sato, Taketomo; Hasegawa, Hideki | Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers | - | Apr-2005 |
| article (author version) | Sato, Taketomo; Oikawa, Takeshi; Hasegawa, Hideki | Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers | - | Apr-2005 |
| article (author version) | Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki | Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation | - | Applied Surface Science | - | 15-Mar-2005 |
| article | HASEGAWA, Hideki; KASAI, Seiya; SATO, Taketomo | Hexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs | - | IEICE TRANSACTIONS on Electronics | - | Oct-2004 |
| article (author version) | Sato, Taketomo; Tamai, Isao; Yoshida, Souichi; Hasegawa, Hideki | Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy | - | Applied Surface Science | - | 15-Jul-2004 |
| article (author version) | Tamai, Isao; Sato, Taketomo; Hasegawa, Hideki | Formation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates | - | Physica E: Low-dimensional Systems and Nanostructures | - | Mar-2004 |
| article (author version) | Hirano, Tetsuro; Ito, Akira; Sato, Taketomo; Ishikawa, Fumitaro; Hasegawa, Hideki | Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots | - | Japanese Journal of Applied Physics part 1, Regular papers & short notes | - | Feb-2002 |
| article (author version) | Sato, Taketomo; Kasai, Seiya; Hasegawa, Hideki | Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process | - | Applied Surface Science | - | 2001 |
