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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Sato, Taketomo; Tamai, Isao; Yoshida, Souichi; Hasegawa, HidekiEvolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy-Applied Surface Science-15-Jul-2004
article (author version)Tamai, Isao; Sato, Taketomo; Hasegawa, HidekiFormation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates-Physica E: Low-dimensional Systems and Nanostructures-Mar-2004
article (author version)Hirano, Tetsuro; Ito, Akira; Sato, Taketomo; Ishikawa, Fumitaro; Hasegawa, HidekiElectrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots-Japanese Journal of Applied Physics part 1, Regular papers & short notes-Feb-2002
article (author version)Sato, Taketomo; Kasai, Seiya; Hasegawa, HidekiCurrent transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process-Applied Surface Science-2001
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