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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleKimura, Takeshi; Hashizume, TamotsuEffect of carbon incorporation on electrical properties of n-type GaN surfaces-Journal of Applied Physics-Jan-2009
article (author version)Ooyama, Kimihito; Kato, Hiroki; Miczek, Marcin; Hashizume, TamotsuTemperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure-Japanese Journal of Applied Physics-25-Jul-2008
articleMiczek, Marcin; Mizue, Chihoko; Hashizume, Tamotsu; Adamowicz, BogusławaEffects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors-Journal of Applied Physics-28-May-2008
article (author version)Sato, Taketomo; Mizohata, Akinori; Yoshizawa, Naoki; Hashizume, TamotsuAmperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures-Applied Physics Express-May-2008
article (author version)Tamura, Takahiro; Kotani, Junji; Kasai, Seiya; Hashizume, TamotsuNearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor-Applied Physics Express-25-Feb-2008
articleKotani, Junji; Tajima, Masafumi; Kasai, Seiya; Hashizume, TamotsuMechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures-Applied Physics Letters-27-Aug-2007
article (author version)Ogawa, Eri; Hashizume, Tamotsu; Nakazawa, Satoshi; Ueda, Tetsuzo; Tanaka, TsuyoshiChemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition-Japanese Journal of Applied Physics. Pt. 2, Letters & express letters-25-Jun-2007
articleKaneko, M.; Hashizume, T.; Odnoblyudov, V. A.; Tu, C. W.Electrical and deep-level characterization of GaP xNx grown by gas-source molecular beam epitaxy-Journal of Applied Physics-15-May-2007
article (author version)Shiozaki, Nanako; Sato, Taketomo; Hashizume, TamotsuFormation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Apr-2007
article (author version)Kimura, Takeshi; Ootomo, Shinya; Nomura, Takehiko; Yoshida, Seikoh; Hashizume, TamotsuSolid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure-Japanese Journal of Applied Physics. Pt. 2, Letters & express letters-Mar-2007
articleNakamura, Tatsuya; Kasai, Seiya; Shiratori, Yuta; Hashizume, TamotsuFabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates-Applied Physics Letters-Mar-2007
articleSato, Taketomo; Fujino, Toshiyuki; Hashizume, TamotsuElectrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions-Electrochemical and Solid-State Letters-2007
articleKotani, Junji; Kaneko, Masamitsu; Hasegawa, Hideki; Hashizume, TamotsuLarge reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism-Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures-Jul-2006
article (author version)Hashizume, Tamotsu; Kotani, Junji; Basile, Alberto; Kaneko, MasamitsuSurface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors-Japanese Journal of Applied Physics. Pt. 2, Letters & express letters-Feb-2006
articleKotani, Junji; Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, HidekiLateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
article (author version)Oikawa, Takeshi; Ishikawa, Fumitaro; Sato, Taketomo; Hashizume, TamotsuStudy on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates-Applied Surface Science-15-May-2005
article (author version)Matsuo, Kazushi; Negoro, Noboru; Kotani, Junji; Hashizume, Tamotsu; Hasegawa, HidekiPt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure-Applied Surface Science-15-May-2005
article (author version)Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, HidekiSurface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation-Applied Surface Science-15-Mar-2005
articleKumakura, K.; Makimoto, T.; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H.Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence-Applied Physics Letters-Jan-2005
article (author version)Kotani, Junji; Hasegawa, Hideki; Hashizume, TamotsuComputer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model-Applied Surface Science-15-Oct-2004
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