| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article | Kimura, Takeshi; Hashizume, Tamotsu | Effect of carbon incorporation on electrical properties of n-type GaN surfaces | - | Journal of Applied Physics | - | Jan-2009 |
| article (author version) | Ooyama, Kimihito; Kato, Hiroki; Miczek, Marcin; Hashizume, Tamotsu | Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure | - | Japanese Journal of Applied Physics | - | 25-Jul-2008 |
| article | Miczek, Marcin; Mizue, Chihoko; Hashizume, Tamotsu; Adamowicz, Bogusława | Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors | - | Journal of Applied Physics | - | 28-May-2008 |
| article (author version) | Sato, Taketomo; Mizohata, Akinori; Yoshizawa, Naoki; Hashizume, Tamotsu | Amperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures | - | Applied Physics Express | - | May-2008 |
| article (author version) | Tamura, Takahiro; Kotani, Junji; Kasai, Seiya; Hashizume, Tamotsu | Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor | - | Applied Physics Express | - | 25-Feb-2008 |
| article | Kotani, Junji; Tajima, Masafumi; Kasai, Seiya; Hashizume, Tamotsu | Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures | - | Applied Physics Letters | - | 27-Aug-2007 |
| article (author version) | Ogawa, Eri; Hashizume, Tamotsu; Nakazawa, Satoshi; Ueda, Tetsuzo; Tanaka, Tsuyoshi | Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | 25-Jun-2007 |
| article | Kaneko, M.; Hashizume, T.; Odnoblyudov, V. A.; Tu, C. W. | Electrical and deep-level characterization of GaP xNx grown by gas-source molecular beam epitaxy | - | Journal of Applied Physics | - | 15-May-2007 |
| article (author version) | Shiozaki, Nanako; Sato, Taketomo; Hashizume, Tamotsu | Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-2007 |
| article (author version) | Kimura, Takeshi; Ootomo, Shinya; Nomura, Takehiko; Yoshida, Seikoh; Hashizume, Tamotsu | Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | Mar-2007 |
| article | Nakamura, Tatsuya; Kasai, Seiya; Shiratori, Yuta; Hashizume, Tamotsu | Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates | - | Applied Physics Letters | - | Mar-2007 |
| article | Sato, Taketomo; Fujino, Toshiyuki; Hashizume, Tamotsu | Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions | - | Electrochemical and Solid-State Letters | - | 2007 |
| article | Kotani, Junji; Kaneko, Masamitsu; Hasegawa, Hideki; Hashizume, Tamotsu | Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism | - | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures | - | Jul-2006 |
| article (author version) | Hashizume, Tamotsu; Kotani, Junji; Basile, Alberto; Kaneko, Masamitsu | Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | Feb-2006 |
| article | Kotani, Junji; Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, Hideki | Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2005 |
| article (author version) | Oikawa, Takeshi; Ishikawa, Fumitaro; Sato, Taketomo; Hashizume, Tamotsu | Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates | - | Applied Surface Science | - | 15-May-2005 |
| article (author version) | Matsuo, Kazushi; Negoro, Noboru; Kotani, Junji; Hashizume, Tamotsu; Hasegawa, Hideki | Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure | - | Applied Surface Science | - | 15-May-2005 |
| article (author version) | Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki | Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation | - | Applied Surface Science | - | 15-Mar-2005 |
| article | Kumakura, K.; Makimoto, T.; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H. | Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence | - | Applied Physics Letters | - | Jan-2005 |
| article (author version) | Kotani, Junji; Hasegawa, Hideki; Hashizume, Tamotsu | Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model | - | Applied Surface Science | - | 15-Oct-2004 |
