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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleKotani, Junji; Hashizume, Tamotsu; Hasegawa, HidekiAnalysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-20-Aug-2004
article (author version)Hashizume, Tamotsu; Hasegawa, HidekiEffects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes-Applied Surface Science-15-Jul-2004
articleHashizume, Tamotsu; Kotani, Junji; Hasegawa, HidekiLeakage mechanism in GaN and AlGaN Schottky interfaces-Applied Physics Letters-14-Jul-2004
article (author version)Hashizume, Tamotsu; Anantathanasarn, Sanguan; Negoro, Noboru; Sano, Eiichi; Hasegawa, Hideki; Kumakura, Kazuhide; Makimoto, ToshikiAl2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers-Japanese Journal of Applied Physics. Pt. 2, Letters & express letters-15-Jun-2004
articleHashizume, Tamotsu; Ootomo, Shinya; Hasegawa, HidekiSuppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric-Applied Physics Letters-6-Oct-2003
articleHashizume, Tamotsu; Ootomo, Shinya; Inagaki, Takanori; Hasegawa, HidekiSurface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-5-Aug-2003
articleHasegawa, Hideki; Inagaki, Takanori; Ootomo, Shinya; Hashizume, TamotsuMechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-5-Aug-2003
articleHashizume, TamotsuEffects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface-Journal of Applied Physics-1-Jul-2003
articleHashizume, TamotsuSurface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy-Applied Physics Letters-23-Sep-2002
articleHashizume, Tamotsu; Nakasaki, RyusukeDiscrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces-Applied Physics Letters-17-Jul-2002
article (author version)Oyama, Susumu; Hashizume, Tamotsu; Hasegawa, HidekiMechanism of current leakage through metal/n-GaN interfaces-Applied Surface Science-8-May-2002
articleOotomo, S.; Hashizume, T.; Hasegawa, H.Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer-Physica Status Solidi (a)-22-Nov-2001
articleHashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, HidekiChemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2001
articleHashizume, Tamotsu; Saitoh, ToshiyaNatural oxides on air-exposed and chemically treated InGaP surfaces grown by metalorganic vapor phase epitaxy-Applied Physics Letters-16-Apr-2001
article (author version)Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, HidekiElectron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Dec-1996
theses (doctoral)Hashizume, TamotsuDeep Level Characterization of GaAs and AlGaAs by Capacitance Spectroscopy容量分光法によるGaAsおよびAlGaAsの深い準位の評価--25-Mar-1991
bulletin (article)橋詰, 保; 池田, 英治; 赤津, 祐史; 大野, 英男; 長谷川, 英機MOCVD成長によるアンドープGaAs中の電子トラップDeep Electron Traps in Undoped GaAs Grown by MOCVD北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University31-May-1984
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