Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
article | Kotani, Junji; Hashizume, Tamotsu; Hasegawa, Hideki | Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | 20-Aug-2004 |
article (author version) | Hashizume, Tamotsu; Hasegawa, Hideki | Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes | - | Applied Surface Science | - | 15-Jul-2004 |
article | Hashizume, Tamotsu; Kotani, Junji; Hasegawa, Hideki | Leakage mechanism in GaN and AlGaN Schottky interfaces | - | Applied Physics Letters | - | 14-Jul-2004 |
article (author version) | Hashizume, Tamotsu; Anantathanasarn, Sanguan; Negoro, Noboru; Sano, Eiichi; Hasegawa, Hideki; Kumakura, Kazuhide; Makimoto, Toshiki | Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | 15-Jun-2004 |
article | Hashizume, Tamotsu; Ootomo, Shinya; Hasegawa, Hideki | Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric | - | Applied Physics Letters | - | 6-Oct-2003 |
article | Hashizume, Tamotsu; Ootomo, Shinya; Inagaki, Takanori; Hasegawa, Hideki | Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | 5-Aug-2003 |
article | Hasegawa, Hideki; Inagaki, Takanori; Ootomo, Shinya; Hashizume, Tamotsu | Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | 5-Aug-2003 |
article | Hashizume, Tamotsu | Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface | - | Journal of Applied Physics | - | 1-Jul-2003 |
article | Hashizume, Tamotsu | Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy | - | Applied Physics Letters | - | 23-Sep-2002 |
article | Hashizume, Tamotsu; Nakasaki, Ryusuke | Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces | - | Applied Physics Letters | - | 17-Jul-2002 |
article (author version) | Oyama, Susumu; Hashizume, Tamotsu; Hasegawa, Hideki | Mechanism of current leakage through metal/n-GaN interfaces | - | Applied Surface Science | - | 8-May-2002 |
article | Ootomo, S.; Hashizume, T.; Hasegawa, H. | Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer | - | Physica Status Solidi (a) | - | 22-Nov-2001 |
article | Hashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, Hideki | Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2001 |
article | Hashizume, Tamotsu; Saitoh, Toshiya | Natural oxides on air-exposed and chemically treated InGaP surfaces grown by metalorganic vapor phase epitaxy | - | Applied Physics Letters | - | 16-Apr-2001 |
article (author version) | Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, Hideki | Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Dec-1996 |
theses (doctoral) | Hashizume, Tamotsu | Deep Level Characterization of GaAs and AlGaAs by Capacitance Spectroscopy | 容量分光法によるGaAsおよびAlGaAsの深い準位の評価 | - | - | 25-Mar-1991 |
bulletin (article) | 橋詰, 保; 池田, 英治; 赤津, 祐史; 大野, 英男; 長谷川, 英機 | MOCVD成長によるアンドープGaAs中の電子トラップ | Deep Electron Traps in Undoped GaAs Grown by MOCVD | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 31-May-1984 |