Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
article (author version) | Tamai, Isao; Sato, Taketomo; Hasegawa, Hideki | Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers | - | Apr-2005 |
article (author version) | Sato, Taketomo; Oikawa, Takeshi; Hasegawa, Hideki | Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers | - | Apr-2005 |
article | HASEGAWA, Hideki; KASAI, Seiya; SATO, Taketomo | Hexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs | - | IEICE TRANSACTIONS on Electronics | - | Oct-2004 |
article (author version) | Sato, Taketomo; Tamai, Isao; Yoshida, Souichi; Hasegawa, Hideki | Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy | - | Applied Surface Science | - | 15-Jul-2004 |
article | Sato, Taketomo; Tamai, Isao; Hasegawa, Hideki | Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2004 |
article (author version) | Hashizume, Tamotsu; Anantathanasarn, Sanguan; Negoro, Noboru; Sano, Eiichi; Hasegawa, Hideki; Kumakura, Kazuhide; Makimoto, Toshiki | Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | 15-Jun-2004 |
article (author version) | Tamai, Isao; Sato, Taketomo; Hasegawa, Hideki | Formation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates | - | Physica E: Low-dimensional Systems and Nanostructures | - | Mar-2004 |
article | Hashizume, Tamotsu; Ootomo, Shinya; Hasegawa, Hideki | Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric | - | Applied Physics Letters | - | 6-Oct-2003 |
article (author version) | Kasai, Seiya; Han, Weihua; Yumoto, Miki; Hasegawa, Hideki | Teraheltz Response of Schottky Wrap Gate-Controlled Quantum Dots | - | Physica Status Solidi. C. Current Topics in Solid State Physics | - | 26-Jun-2003 |
article (author version) | Kameda, Atsushi; Kasai, Seiya; Sato, Taketomo; Hasegawa, Hideki | Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs | - | Solid-State Electronics | - | Feb-2003 |
article (author version) | Seiya, Kasai; Yumoto, Miki; Hasegawa, Hideki | Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach | - | Solid-State Electronics | - | Feb-2003 |
proceedings (author version) | Sato, Taketomo; Tamai, Isao; Hasegawa, Hideki | Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism | - | Institute of Physics conference series | - | 2003 |
article (author version) | Yumoto, Miki; Kasai, Seiya; Hasegawa, Hideki | Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates | - | Applied Surface Science | - | 8-May-2002 |
article (author version) | Kasai, Seiya; Hasegawa, Hideki | III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks | - | Applied Surface Science | - | 8-May-2002 |
article (author version) | Endo, Makoto; Jin, Zhi; Kasai, Seiya; Hasegawa, Hideki | Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-2002 |
article (author version) | Yumoto, Miki; Kasai, Seiya; Hasegawa, Hideki | Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-2002 |
article (author version) | Kasai, Seiya; Hasegawa, Hideki | GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture | - | Physica E: Low-dimensional Systems and Nanostructures | - | Mar-2002 |
article (author version) | Hirano, Tetsuro; Ito, Akira; Sato, Taketomo; Ishikawa, Fumitaro; Hasegawa, Hideki | Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots | - | Japanese Journal of Applied Physics part 1, Regular papers & short notes | - | Feb-2002 |
article (author version) | Fu, Zhengwen; Takahashi, Hiroshi; Kasai, Seiya; Hasegawa, Hideki | Optimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Feb-2002 |
article (author version) | Hasegawa, Hideki; Kasai, Seiya | Hexagonal Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires | - | Physica E: Low-dimensional Systems and Nanostructures | - | Oct-2001 |