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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Sato, Taketomo; Oikawa, Takeshi; Hasegawa, HidekiGrowth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers-Apr-2005
articleHASEGAWA, Hideki; KASAI, Seiya; SATO, TaketomoHexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs-IEICE TRANSACTIONS on Electronics-Oct-2004
article (author version)Sato, Taketomo; Tamai, Isao; Yoshida, Souichi; Hasegawa, HidekiEvolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy-Applied Surface Science-15-Jul-2004
articleSato, Taketomo; Tamai, Isao; Hasegawa, HidekiGrowth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2004
article (author version)Hashizume, Tamotsu; Anantathanasarn, Sanguan; Negoro, Noboru; Sano, Eiichi; Hasegawa, Hideki; Kumakura, Kazuhide; Makimoto, ToshikiAl2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers-Japanese Journal of Applied Physics. Pt. 2, Letters & express letters-15-Jun-2004
article (author version)Tamai, Isao; Sato, Taketomo; Hasegawa, HidekiFormation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates-Physica E: Low-dimensional Systems and Nanostructures-Mar-2004
articleHashizume, Tamotsu; Ootomo, Shinya; Hasegawa, HidekiSuppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric-Applied Physics Letters-6-Oct-2003
article (author version)Kasai, Seiya; Han, Weihua; Yumoto, Miki; Hasegawa, HidekiTeraheltz Response of Schottky Wrap Gate-Controlled Quantum Dots-Physica Status Solidi. C. Current Topics in Solid State Physics-26-Jun-2003
article (author version)Kameda, Atsushi; Kasai, Seiya; Sato, Taketomo; Hasegawa, HidekiEffects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs-Solid-State Electronics-Feb-2003
article (author version)Seiya, Kasai; Yumoto, Miki; Hasegawa, HidekiFabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach-Solid-State Electronics-Feb-2003
proceedings (author version)Sato, Taketomo; Tamai, Isao; Hasegawa, HidekiSelective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism-Institute of Physics conference series-2003
article (author version)Kasai, Seiya; Hasegawa, HidekiIII-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks-Applied Surface Science-8-May-2002
article (author version)Yumoto, Miki; Kasai, Seiya; Hasegawa, HidekiGraph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates-Applied Surface Science-8-May-2002
article (author version)Endo, Makoto; Jin, Zhi; Kasai, Seiya; Hasegawa, HidekiReactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Apr-2002
article (author version)Yumoto, Miki; Kasai, Seiya; Hasegawa, HidekiNovel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Apr-2002
article (author version)Kasai, Seiya; Hasegawa, HidekiGaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture-Physica E: Low-dimensional Systems and Nanostructures-Mar-2002
article (author version)Fu, Zhengwen; Takahashi, Hiroshi; Kasai, Seiya; Hasegawa, HidekiOptimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Feb-2002
article (author version)Hirano, Tetsuro; Ito, Akira; Sato, Taketomo; Ishikawa, Fumitaro; Hasegawa, HidekiElectrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots-Japanese Journal of Applied Physics part 1, Regular papers & short notes-Feb-2002
articleXIE, Yong-Gui; KASAI, Seiya; TAKAHASHI, Hiroshi; JIANG, Chao; HASEGAWA, HidekiFabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer-IEICE Transactions on Electronics-Oct-2001
article (author version)Hasegawa, Hideki; Kasai, SeiyaHexagonal Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires-Physica E: Low-dimensional Systems and Nanostructures-Oct-2001
Showing results 21 to 40 of 88
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