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Hokkaido University Collection of Scholarly and Academic Papers >
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| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | bulletin (article) | 有本, 智; 金澤, 裕; 原, 毅彦; 大野, 英男; 長谷川, 英機 | 等温過渡容量法 (ICTS) によるアモルファスSi MIS構造の評価 | Characterization of Interface Properties in an Amorphous Silicon Metal Insulator Semiconductor Structure by Isothermal Capacitance Transient Spectroscopy | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 31-Jul-1985 |
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