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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
bulletin (article)樋口, 恵一; 後藤, 修; 福井, 孝志; 長谷川, 英機原子層エピタキシ法によるInAs/GaAs量子井戸の形成と評価The Fabrication and Properties of InAs/GaAs Quantum Wells by ALE北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University27-May-1992
bulletin (article)後藤, 修; 樋口, 恵一; 長谷川, 英機原子層エピタキシ法によるInAs,GaAs薄膜の形成と量子井戸および障壁構造の製作Atomic Layer Epitaxy Growth of InAs and GaAs Thin Films and Fabrication of Quantum Wells and Barriers北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University24-May-1991
bulletin (article)松原, 義徳; 後藤, 修; 大塚, 俊介; 長谷川, 英機; 大野, 英男MOVPE法によるInAsの原子層エピタキシと成長機構Atomic Layer Epitaxy of InAs by MOVPE and Growth Mechanism北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University31-May-1990
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