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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleMatys, M.; Stoklas, R.; Kuzmik, J.; Adamowicz, B.; Yatabe, Z.; Hashizume, T.Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures-Journal of Applied Physics-31-May-2016
articleMatys, M.; Adamowicz, B.; Hashizume, T.Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement-Applied Physics Letters-3-Dec-2012
articleMatys, M.; Adamowicz, B.; Hori, Y.; Hashizume, T.Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method-Applied Physics Letters-8-Jul-2013
articleMatys, M.; Adamowicz, B.; Zytkiewicz, Z. R.; Taube, A.; Kruszka, R.; Piotrowska, A.High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films-Applied physics letters-1-Aug-2016
articleMatys, M.; Adamowicz, B.Mechanism of yellow luminescence in GaN at room temperature-Journal of Applied Physics-14-Feb-2017
articleMatys, M.; Adamowicz, B.; Domanowska, A.; Michalewicz, A.; Stoklas, R.; Akazawa, M.; Yatabe, Z.; Hashizume, T.On the origin of interface states at oxide/III-nitride heterojunction interfaces-Journal of Applied Physics-14-Dec-2016
articleMatys, M.; Stoklas, R.; Blaho, M.; Adamowicz, B.Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition-Applied physics letters-15-Jun-2017
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