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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleAsubar, Joel T.; Yatabe, Zenji; Gregusova, Dagmar; Hashizume, TamotsuControlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation-Journal of Applied Physics-28-Mar-2021
articleKaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, TamotsuHighly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates-Applied physics letters-18-Oct-2016
article (author version)Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo; Hashizume, TamotsuInterface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces-Physica status solidi A applications and materials science-May-2015
article (author version)Yatabe, Zenji; Muramatsu, Toru; Asubar, Joel T.; Kasai, SeiyaCalculating relaxation time distribution function from power spectrum based on inverse integral transformation method-Physics Letters A-20-Mar-2015
articleAsubar, Joel T.; Yatabe, Zenji; Hashizume, TamotsuReduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors-Applied Physics Letters-4-Aug-2014
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