Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
article | Hasegawa, H.; Date, H. | Study of electron transport in hydrocarbon gases | - | Journal of applied physics | - | 8-Apr-2015 |
article (author version) | Yamazaki, A.; Watanabe, T.; Tsunogai, U.; Hasegawa, H.; Yamano, H. | The coral δ15N record of terrestrial nitrate loading varies with river catchment land use | - | Coral Reefs | - | 28-Oct-2014 |
article | Hasegawa, H.; Date, H.; Shimozuma, M.; Itoh, H. | Properties of electron swarms in CF3I | - | Applied Physics Letters | - | 7-Sep-2009 |
article | Hasegawa, H.; Date, H.; Yoshida, K.; Shimozuma, M. | Time-of-flight observation of electron swarm in methane | - | Journal of Applied Physics | - | Jun-2009 |
article (author version) | Date, H.; Sutherland, K. L.; Hasegawa, H.; Shimcizurna, M. | Ionization and excitation collision processes of electrons in liquid water | - | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | - | Dec-2007 |
article (author version) | Hasegawa, H.; Date, H.; Shimozuma, M. | Electron swarm parameters in water vapour | - | Journal of Physics D Applied Physics | - | 21-Apr-2007 |
article (author version) | Kasai, S.; Kotani, J.; Hashizume, T.; Hasegawa, H. | Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates | - | Journal of Electronic Materials | - | Apr-2006 |
article | Kumakura, K.; Makimoto, T.; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H. | Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence | - | Applied Physics Letters | - | Jan-2005 |
proceedings (author version) | Kasai, S.; Yumoto, M.; Sato, T.; Hasegawa, H. | Design and Implementation of Ultra-Small-Size and Ultra-Low-Power Digital Systems on GaAs-based Hexagonal Nanowire Networks Utilizing a Hexagonal BDD Quantum Circuit Approach | - | ECS Proceeding | - | 2004 |
article | Kasai, S.; Hasegawa, H. | A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon | - | IEEE Electron Device Letters | - | Aug-2002 |
article | Ootomo, S.; Hashizume, T.; Hasegawa, H. | Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer | - | Physica Status Solidi (a) | - | 22-Nov-2001 |
article | Yong, Gui Xie.; Kasai, S.; Takahashi, H.; Chao, Jiang.; Hasegawa, H. | A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance | - | IEEE Electron Device Letters | - | Jul-2001 |
proceedings (author version) | Kasai, S.; Hasegawa, H. | Gate Controlled Conductance Oscillations in GaAs Schottky Wrap-Gate Single Electron Transistors | - | Springer Proceedings in Physics | - | 2001 |
proceedings (author version) | Kasai, S.; Satoh, Y.; Hasegawa, H. | GaAs quantum wire transistors and single electron transistors using Schottky wrap gates for quantum integrated circuits | - | Institute of Physics conference series | - | 2000 |
article | Kozasa, T.; Hasegawa, H.; Nomoto, K. | Formation of dust grains in the ejecta of SN 1987A. II | - | Astronomy and Astrophysics | - | Sep-1991 |
bulletin (article) | 岩舘, 弘剛; 斉藤, 俊也; 長谷川, 英機 | フォトルミネセンス法によるInGaAs表面の評価 | Characterization of InGaAs Surface by Photoluminescence | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 20-Jul-1991 |