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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleAkazawa, M.; Gao, B.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N.Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures-Applied Physics Letters-4-Apr-2011
articleAkazawa, M.; Gao, B.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N.Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy-Journal of Applied Physics-1-Jan-2011
articleAkazawa, M.; Matsuyama, T.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N.Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy-Applied Physics Letters-29-Mar-2010
article (author version)Kasai, S.; Kotani, J.; Hashizume, T.; Hasegawa, H.Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates-Journal of Electronic Materials-Apr-2006
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