Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 4 of 4
Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | article | Akazawa, M.; Gao, B.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N. | Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures | - | Applied Physics Letters | - | 4-Apr-2011 |
article | Akazawa, M.; Gao, B.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N. | Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy | - | Journal of Applied Physics | - | 1-Jan-2011 |
article | Akazawa, M.; Matsuyama, T.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N. | Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy | - | Applied Physics Letters | - | 29-Mar-2010 |
article (author version) | Kasai, S.; Kotani, J.; Hashizume, T.; Hasegawa, H. | Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates | - | Journal of Electronic Materials | - | Apr-2006 |
Showing results 1 to 4 of 4
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