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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleOhta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, TamotsuHigh Thermoelectric Power Factor of High-Mobility 2D Electron Gas-Advanced Science-Jan-2018
article (author version)Sato, Taketomo; Yoshizawa, Naoki; Hashizume, TamotsuRealization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells-Thin Solid Films-31-May-2010
articleSato, Taketomo; Yoshizawa, Naoki; Okazaki, Hiroyuki; Hashizume, TamotsuLow Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching-ECS Transactions-2010
articleSato, Taketomo; Mizohata, Akinori; Hashizume, TamotsuElectrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors-Journal of The Electrochemical Society-2010
article (author version)Yoshizawa, Naoki; Sato, Taketomo; Hashizume, TamotsuFundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors-Japanese Journal of Applied Physics-Sep-2009
article (author version)Zhao, Hong-Quan; Kasai, Seiya; Shiratori, Yuta; Hashizume, TamotsuA binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topologyBDD-based 2-bit Arithmetic Logic Unit on GaAs-based Regular Nanowire Network with Hexagonal TopologyNanotechnology-17-Jun-2009
articleSato, Taketomo; Oikawa, Takeshi; Hasegawa, Hideki; Hashizume, TamotsuSelective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism-Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures-26-Jul-2006
articleKokawa, Takuya; Sato, Taketomo; Hasegawa, Hideki; Hashizume, TamotsuLiquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure-Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures-25-Jul-2006
article (author version)Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, TamotsuProperties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits-Journal of Physics: Conference Series-2006
bulletin (article)橋詰, 保; 池田, 英治; 赤津, 祐史; 大野, 英男; 長谷川, 英機MOCVD成長によるアンドープGaAs中の電子トラップDeep Electron Traps in Undoped GaAs Grown by MOCVD北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University31-May-1984
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