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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleHori, Y.; Yatabe, Z.; Hashizume, T.Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors-Journal of Applied Physics-27-Dec-2013
articleMatys, M.; Adamowicz, B.; Hori, Y.; Hashizume, T.Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method-Applied Physics Letters-10-Jul-2013
bulletin (article)Sueoka, K.; Sasaki, M.; Hamanaka, I.; Hori, Y.; Mukasa, K.; Hayakawa, K.; Sasaki, Y.; Iwata, T.; Adachi, H.Mott Spin Polarimeter with Spherical Acceleration Electrodes-Memoirs of the Faculty of Engineering, Hokkaido University北海道大学工学部紀要1994
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