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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleHashizume, Tamotsu; Ootomo, Shinya; Inagaki, Takanori; Hasegawa, HidekiSurface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-5-Aug-2003
articleHasegawa, Hideki; Inagaki, Takanori; Ootomo, Shinya; Hashizume, TamotsuMechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-5-Aug-2003
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