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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Isobe, Kazuki; Akazawa, MasamichiEffects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers-Japanese Journal of Applied Physics (JJAP)-1-Apr-2020
articleIsobe, Kazuki; Akazawa, MasamichiImpact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode-AIP Advances-Nov-2018
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