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Hokkaido University Collection of Scholarly and Academic Papers >

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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Akazawa, Masamichi; Wu, Encheng; Sakurai, Hideki; Bockowski, Michal; Narita, Tetsuo; Kachi, TetsuX-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN-Japanese Journal of Applied Physics (JJAP)-1-Mar-2021
article (author version)Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Kachi, Tetsu; Uedono, AkiraLow-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam-Japanese Journal of Applied Physics (JJAP)-1-Jan-2021
article (author version)Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Narita, Tetsuo; Omori, Masato; Suda, Jun; Kachi, TetsuEffects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing-Physica status solidi B-basic solid state physics-6-Feb-2020
article (author version)Matsumoto, Satoru; Toguchi, Masachika; Takeda, Kentaro; Narita, Tetsuo; Kachi, Tetsu; Sato, TaketomoEffects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN-Japanese Journal of Applied Physics (JJAP)-Dec-2018
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