Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 3 of 3
Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | article (author version) | Akazawa, Masamichi; Kamoshida, Ryo | Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Sep-2020 |
article (author version) | Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Narita, Tetsuo; Omori, Masato; Suda, Jun; Kachi, Tetsu | Effects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing | - | Physica status solidi B-basic solid state physics | - | 6-Feb-2020 |
article (author version) | Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Kachi, Tetsu; Uedono, Akira | Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Jan-2021 |
Showing results 1 to 3 of 3
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