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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 4 of 4
| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article | Hashizume, Tamotsu; Kaneki, Shota; Oyobiki, Tatsuya; Ando, Yuji; Sasaki, Shota; Nishiguchi, Kenya | Effects of postmetallization annealing on interface properties of Al2O3/GaN structures | - | Applied Physics Express (APEX) | - | Dec-2018 |
| article | Hashizume, Tamotsu; Nishiguchi, Kenya; Kaneki, Shota; Kuzmik, Jan; Yatabe, Zenji | State of the art on gate insulation and surface passivation for GaN-based power HEMTs | - | Materials science in semiconductor processing | - | May-2018 |
| article | Ohta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, Tamotsu | High Thermoelectric Power Factor of High-Mobility 2D Electron Gas | - | Advanced Science | - | Jan-2018 |
| article | Kaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu | Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates | - | Applied physics letters | - | 18-Oct-2016 |
Showing results 1 to 4 of 4
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