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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Kasai, S.; Kotani, J.; Hashizume, T.; Hasegawa, H.Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates-Journal of Electronic Materials-Apr-2006
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