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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 10 of 10
Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | article | Kotani, Junji; Hashizume, Tamotsu; Hasegawa, Hideki | Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | 20-Aug-2004 |
article (author version) | Kotani, Junji; Hasegawa, Hideki; Hashizume, Tamotsu | Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model | - | Applied Surface Science | - | 15-Oct-2004 |
article | Kotani, Junji; Kaneko, Masamitsu; Hasegawa, Hideki; Hashizume, Tamotsu | Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism | - | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures | - | Jul-2006 |
article | Kotani, Junji; Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, Hideki | Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2005 |
article | Hashizume, Tamotsu; Kotani, Junji; Hasegawa, Hideki | Leakage mechanism in GaN and AlGaN Schottky interfaces | - | Applied Physics Letters | - | 14-Jul-2004 |
article | Kotani, Junji; Tajima, Masafumi; Kasai, Seiya; Hashizume, Tamotsu | Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures | - | Applied Physics Letters | - | 27-Aug-2007 |
article | Sugawara, Katsuya; Kotani, Junji; Hashizume, Tamotsu | Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition | - | Applied Physics Letters | - | 13-Apr-2009 |
article (author version) | Tamura, Takahiro; Kotani, Junji; Kasai, Seiya; Hashizume, Tamotsu | Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor | - | Applied Physics Express | - | 25-Feb-2008 |
article (author version) | Matsuo, Kazushi; Negoro, Noboru; Kotani, Junji; Hashizume, Tamotsu; Hasegawa, Hideki | Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure | - | Applied Surface Science | - | 15-May-2005 |
article (author version) | Hashizume, Tamotsu; Kotani, Junji; Basile, Alberto; Kaneko, Masamitsu | Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | Feb-2006 |
Showing results 1 to 10 of 10
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