Hokkaido University Collection of Scholarly and Academic Papers >
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Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | article (author version) | Hashizume, Tamotsu; Anantathanasarn, Sanguan; Negoro, Noboru; Sano, Eiichi; Hasegawa, Hideki; Kumakura, Kazuhide; Makimoto, Toshiki | Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | 15-Jun-2004 |
bulletin (article) | 岸田, 基也; 熊倉, 一英; 中越, 一彰; 山崎, 高宏; 本久, 順一; 福井, 孝志; 長谷川, 英機 | 選択成長によるGaAs及びAlGaAs立体構造の作製と評価 | Fabrication and Characterization of GaAs and AlGaAs Micro-Pyramids by Selective MOCVD | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 29-Jul-1994 |
Showing results 1 to 2 of 2
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