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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 4 of 4
| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article | Matys, M.; Stoklas, R.; Kuzmik, J.; Adamowicz, B.; Yatabe, Z.; Hashizume, T. | Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures | - | Journal of Applied Physics | - | 31-May-2016 |
| article | Matys, M.; Adamowicz, B.; Hashizume, T. | Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement | - | Applied Physics Letters | - | 3-Dec-2012 |
| article | Matys, M.; Adamowicz, B.; Hori, Y.; Hashizume, T. | Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method | - | Applied Physics Letters | - | 10-Jul-2013 |
| article | Matys, M.; Adamowicz, B.; Domanowska, A.; Michalewicz, A.; Stoklas, R.; Akazawa, M.; Yatabe, Z.; Hashizume, T. | On the origin of interface states at oxide/III-nitride heterojunction interfaces | - | Journal of Applied Physics | - | 14-Dec-2016 |
Showing results 1 to 4 of 4
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