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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleHashizume, Tamotsu; Kaneki, Shota; Oyobiki, Tatsuya; Ando, Yuji; Sasaki, Shota; Nishiguchi, KenyaEffects of postmetallization annealing on interface properties of Al2O3/GaN structures-Applied Physics Express (APEX)-Dec-2018
articleHashizume, Tamotsu; Nishiguchi, Kenya; Kaneki, Shota; Kuzmik, Jan; Yatabe, ZenjiState of the art on gate insulation and surface passivation for GaN-based power HEMTs-Materials science in semiconductor processing-May-2018
articleNishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, TamotsuCurrent linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors-Japanese Journal of Applied Physics (JJAP)-Oct-2017
article (author version)Ohi, Kota; Asubar, Joel Tacla; Nishiguchi, Kenya; Hashizume, TamotsuCurrent Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs-IEEE Transactions on Electron Devices-Oct-2013
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