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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleSato, Taketomo; Oikawa, Takeshi; Hasegawa, Hideki; Hashizume, TamotsuSelective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism-Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures-26-Jul-2006
article (author version)Oikawa, Takeshi; Ishikawa, Fumitaro; Sato, Taketomo; Hashizume, TamotsuStudy on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates-Applied Surface Science-15-May-2005
article (author version)Sato, Taketomo; Oikawa, Takeshi; Hasegawa, HidekiGrowth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers-Apr-2005
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