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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleHashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, HidekiChemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2001
articleHasegawa, Hideki; Inagaki, Takanori; Ootomo, Shinya; Hashizume, TamotsuMechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-5-Aug-2003
article (author version)Kimura, Takeshi; Ootomo, Shinya; Nomura, Takehiko; Yoshida, Seikoh; Hashizume, TamotsuSolid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure-Japanese Journal of Applied Physics. Pt. 2, Letters & express letters-Mar-2007
articleHashizume, Tamotsu; Ootomo, Shinya; Hasegawa, HidekiSuppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric-Applied Physics Letters-6-Oct-2003
articleHashizume, Tamotsu; Ootomo, Shinya; Inagaki, Takanori; Hasegawa, HidekiSurface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-5-Aug-2003
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