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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Oyama, Susumu; Hashizume, Tamotsu; Hasegawa, HidekiMechanism of current leakage through metal/n-GaN interfaces-Applied Surface Science-8-May-2002
articleHashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, HidekiChemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2001
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