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Hokkaido University Collection of Scholarly and Academic Papers >

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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleNishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, TamotsuCurrent linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors-Japanese Journal of Applied Physics (JJAP)-Oct-2017
theses (doctoral)Ozaki, ShiroInterface control of Al2O3-based insulated-gate structures for high-frequency GaN HEMTsAl2O3絶縁ゲート構造の界面制御と高周波GaN HEMTへの応用--25-Mar-2019
theses (doctoral - abstract and summary of review)尾崎，史朗Interface control of Al2O3-based insulated-gate structures for high-frequency GaN HEMTs [an abstract of dissertation and a summary of dissertation review]Al2O3絶縁ゲート構造の界面制御と高周波GaN HEMTへの応用 [論文内容及び審査の要旨]--25-Mar-2019
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