HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >

Sort by: In order: Results/Page Authors/Record:
Export metadata:
Showing results 1 to 5 of 5
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleWei, Mian; Sanchela, Anup V.; Feng, Bin; Ikuhara, Yuichi; Cho, Hai Jun; Ohta, HiromichiHigh electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding similar to 3000 S cm(-1)-Applied physics letters-13-Jan-2020
articleCho, Hai Jun; Feng, Bin; Onozato, Takaki; Wei, Mian; Sanchela, Anup V.; Ikuhara, Yuichi; Ohta, HiromichiInvestigation of electrical and thermal transport property reductions in La-doped BaSnO3 films-Physical Review Materials-3-Sep-2019
article (author version)Sanchela, Anup V.; Wei, Mian; Lee, Joonhyuk; Kim, Gowoon; Jeen, Hyoungjeen; Feng, Bin; Ikuhara, Yuichi; Cho, Hai Jun; Ohta, HiromichiBuffer layer-less fabrication of a high-mobility transparent oxide semiconductor, La-doped BaSnO3-Journal of materials chemistry C-21-May-2019
articleSanchela, Anup V.; Wei, Mian; Zensyo, Haruki; Feng, Bin; Lee, Joonhyuk; Kim, Gowoon; Jeen, Hyoungjeen; Ikuhara, Yuichi; Ohta, HiromichiLarge thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3-Applied physics letters-4-Jun-2018
articleSanchela, Anup V.; Onozato, Takaki; Feng, Bin; Ikuhara, Yuichi; Ohta, HiromichiThermopower modulation clarification of the intrinsic effective mass in transparent oxide semiconductor BaSnO3-Physical Review Materials-4-Aug-2017
Showing results 1 to 5 of 5

 

Hokkaido University