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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Tamai, Isao; Sato, Taketomo; Hasegawa, HidekiCross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers-Apr-2005
article (author version)Sato, Taketomo; Tamai, Isao; Yoshida, Souichi; Hasegawa, HidekiEvolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy-Applied Surface Science-15-Jul-2004
article (author version)Tamai, Isao; Sato, Taketomo; Hasegawa, HidekiFormation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates-Physica E: Low-dimensional Systems and Nanostructures-Mar-2004
articleSato, Taketomo; Tamai, Isao; Hasegawa, HidekiGrowth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2004
articleSato, Taketomo; Tamai, Isao; Hasegawa, HidekiGrowth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
proceedings (author version)Sato, Taketomo; Tamai, Isao; Hasegawa, HidekiSelective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism-Institute of Physics conference series-2003
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