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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 8 of 8
| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article | Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo | Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect | - | Journal of the electrochemical society | - | 15-Jul-2019 |
| article (author version) | Matsumoto, Satoru; Toguchi, Masachika; Takeda, Kentaro; Narita, Tetsuo; Kachi, Tetsu; Sato, Taketomo | Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN | - | Japanese Journal of Applied Physics (JJAP) | - | Dec-2018 |
| article (author version) | Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Yoshida, Takehiro; Sato, Taketomo | Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions | - | Applied Physics Express | - | Jun-2019 |
| article | Shimauchi, Michihito; Miwa, Kazuki; Toguchi, Masachika; Sato, Taketomo; Motohisa, Junichi | Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment | - | Applied Physics Express (APEX) | - | 1-Nov-2021 |
| article (author version) | Sato, Taketomo; Toguchi, Masachika; Komatsu, Yuto; Uemura, Keisuke | Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions | - | IEEE transactions on semiconductor manufacturing | - | Nov-2019 |
| article (author version) | Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo | Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices | - | IEEE transactions on semiconductor manufacturing | - | Nov-2019 |
| article | Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, Taketomo | Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) | - | Journal of Applied Physics | - | 8-Jul-2021 |
| article | Miwa, Kazuki; Komatsu, Yuto; Toguchi, Masachika; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, Taketomo | Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures | - | Applied Physics Express (APEX) | - | 1-Feb-2020 |
Showing results 1 to 8 of 8
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