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Showing results 1 to 6 of 6
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleMiwa, Kazuki; Komatsu, Yuto; Toguchi, Masachika; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, TaketomoSelf-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures-Applied Physics Express (APEX)-1-Feb-2020
article (author version)Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Sato, TaketomoPhotoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices-IEEE transactions on semiconductor manufacturing-Nov-2019
article (author version)Sato, Taketomo; Toguchi, Masachika; Komatsu, Yuto; Uemura, KeisukeLow-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions-IEEE transactions on semiconductor manufacturing-Nov-2019
articleToguchi, Masachika; Miwa, Kazuki; Sato, TaketomoCommunication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect-Journal of the electrochemical society-15-Jul-2019
article (author version)Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Yoshida, Takehiro; Sato, TaketomoElectrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions-Applied Physics Express-Jun-2019
article (author version)Matsumoto, Satoru; Toguchi, Masachika; Takeda, Kentaro; Narita, Tetsuo; Kachi, Tetsu; Sato, TaketomoEffects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN-Japanese Journal of Applied Physics (JJAP)-Dec-2018
Showing results 1 to 6 of 6

 

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