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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Kasai, Seiya; Jinushi, Kei-ichiroh; Tomozawa, Hidemasa; Hasegawa, HidekiFabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Mar-1997
bulletin (article)松崎, 賢一郎; 友沢, 秀征; 駱, 季奎; 大野, 英男; 長谷川, 英機分子線エピタキシ法によるGaAsおよびInGaAs選択ドープへテロ構造の形成と2次元電子ガスの特性評価The Growth of GaAs and InGaAs Selectively Doped Hetero-structures by Molecular Beam Epitaxy and Characterization of Two-dimensional Electron Gas北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University31-May-1989
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