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Hokkaido University Collection of Scholarly and Academic Papers >

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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleMatys, M.; Adamowicz, B.; Domanowska, A.; Michalewicz, A.; Stoklas, R.; Akazawa, M.; Yatabe, Z.; Hashizume, T.On the origin of interface states at oxide/III-nitride heterojunction interfaces-Journal of Applied Physics-14-Dec-2016
articleMatys, M.; Stoklas, R.; Kuzmik, J.; Adamowicz, B.; Yatabe, Z.; Hashizume, T.Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures-Journal of Applied Physics-31-May-2016
articleHori, Y.; Yatabe, Z.; Hashizume, T.Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors-Journal of Applied Physics-27-Dec-2013
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